期刊
APPLIED SCIENCES-BASEL
卷 12, 期 24, 页码 -出版社
MDPI
DOI: 10.3390/app122412508
关键词
infrared detector; type-II superlattice; InAs; InAsSb; CBIRD; strained layer superlattice
This article describes the challenges for long- and very long-wavelength InAs/InAsSb type-II strained-layer superlattice infrared detectors, and provides an overview of progress in device architecture development for addressing them. The complementary barrier infrared detector (CBIRD) containing p-type InAs/InAsSb T2SLS absorbers is explored to enhance quantum efficiency and suppress surface shunt current.
We describe the challenges for long- and very long-wavelength InAs/InAsSb type-II strained-layer superlattice infrared detectors, and provide an overview of progress in device architecture development for addressing them. Specifically, we have explored the complementary barrier infrared detector (CBIRD) that contains p-type InAs/InAsSb T2SLS absorbers for enhancing quantum efficiency, while also suppressing surface shunt current. We describe selected device results, and also provide references to additional results and more in-depth discussions.
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