Ferroelectric Wide-Bandgap Metal Halide Perovskite Field-Effect Transistors: Toward Transparent Electronics

Transparent field-effect transistors (FETs) are attacking intensive interest for constructing fancy invisible electronic products. Presently, the main technology for realizing transparent FETs is based on metal oxide semiconductors, which have wide-bandgap but generally demand sputtering technique or high-temperature (>350 degrees C) solution process for fabrication. Herein, a general device fabrication strategy for metal halide perovskite (MHP) FETs is shown, by which transparent perovskite FETs are successfully obtained using low-temperature (<150 degrees C) solution process. This strategy involves the employment of ferroelectric copolymer poly(vinylidene fluoride-co-trifluoroethylene) (PVDF-TrFE) as the dielectric, which conquers the challenging issue of gate-electric-field screening effect in MHP FETs. Additionally, an ultra-thin SnO2 is inserted between the source/drain electrodes and MHPs to facilitate electron injection. Consequently, n-type semi-transparent MAPbBr(3) FETs and fully transparent MAPbCl(3) FETs which can operate well at room temperature with mobility over 10(-3) cm(2) V-1 s(-1) and on/off ratio >10(3) are achieved for the first time. The low-temperature solution processability of these FETs makes them particularly attractive for applications in low-cost, large-area transparent electronics.

Automated summary

A general device fabrication strategy for metal halide perovskite (MHP) FETs is proposed, which successfully obtains transparent perovskite FETs. The strategy involves the use of ferroelectric copolymer poly(vinylidene fluoride-co-trifluoroethylene) (PVDF-TrFE) as the dielectric, which solves the challenging issue of gate-electric-field screening effect in MHP FETs. Additionally, ultra-thin SnO2 is inserted between the source/drain electrodes and MHPs to facilitate electron injection. These FETs have the attractiveness of low-cost, large-area transparent electronics applications.