期刊
NANOMATERIALS
卷 12, 期 23, 页码 -出版社
MDPI
DOI: 10.3390/nano12234256
关键词
Ga2O3 film; Sn doping; plasma-enhanced atomic layer deposition; X-ray photoelectron spectroscopy; energy band alignment; electrical properties
类别
资金
- National Natural Science Foundation of China
- Shanghai Science and Technology Development Foundation
- Fudan University Foundation
- [11804055]
- [11875204]
- [U1932167]
- [21DZ1100800]
- [20501110700]
In this work, atomic level doping of Sn into Ga2O3 films was achieved using a plasma-enhanced atomic layer deposition method. The study investigated the effects of doping on the chemical state, microstructure, optical properties, energy band alignment, and electrical properties of the films. The results provide valuable insights for the design and application of Ga2O3 film-based transparent devices.
In this work, the atomic level doping of Sn into Ga2O3 films was successfully deposited by using a plasma-enhanced atomic layer deposition method. Here, we systematically studied the changes in the chemical state, microstructure evolution, optical properties, energy band alignment, and electrical properties for various configurations of the Sn-doped Ga2O3 films. The results indicated that all the films have high transparency with an average transmittance of above 90% over ultraviolet and visible light wavelengths. X-ray reflectivity and spectroscopic ellipsometry measurement indicated that the Sn doping level affects the density, refractive index, and extinction coefficient. In particular, the chemical microstructure and energy band structure for the Sn-doped Ga2O3 films were analyzed and discussed in detail. With an increase in the Sn content, the ratio of Sn-O bonding increases, but by contrast, the proportion of the oxygen vacancies decreases. The reduction in the oxygen vacancy content leads to an increase in the valence band maximum, but the energy bandgap decreases from 4.73 to 4.31 eV. Moreover, with the increase in Sn content, the breakdown mode transformed the hard breakdown into the soft breakdown. The C-V characteristics proved that the Sn-doped Ga2O3 films have large permittivity. These studies offer a foundation and a systematical analysis for assisting the design and application of Ga2O3 film-based transparent devices.
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