Nanocrystalline ZnSnN2 Prepared by Reactive Sputtering, Its Schottky Diodes and Heterojunction Solar Cells

ZnSnN2 has potential applications in photocatalysis and photovoltaics. However, the difficulty in preparing nondegenerate ZnSnN2 hinders its device application. Here, the preparation of low-electron-density nanocrystalline ZnSnN2 and its device application are demonstrated. Nanocrystalline ZnSnN2 was prepared with reactive sputtering. Nanocrystalline ZnSnN2 with an electron density of approximately 10(17) cm(-3) can be obtained after annealing at 300 degrees C. Nanocrystalline ZnSnN2 is found to form Schottky contact with Ag. Both the current I vs. voltage V curves and the capacitance C vs. voltage V curves of these samples follow the related theories of crystalline semiconductors due to the limited long-range order provided by the crystallites with sizes of 2-10 nm. The I-V curves together with the nonlinear C-2-V curves imply that there are interface states at the Ag-nanocrystalline ZnSnN2 interface. The application of nanocrystalline ZnSnN2 to heterojunction solar cells is also demonstrated.

Automated summary

Low-electron-density nanocrystalline ZnSnN2 was prepared and its potential for device application was demonstrated. Annealing at 300 degrees Celsius resulted in nanocrystalline ZnSnN2 with an electron density of approximately 10(17) cm(-3). It was found that nanocrystalline ZnSnN2 forms Schottky contact with Ag and exhibits I-V and C-V curves consistent with the theories of crystalline semiconductors. Nonlinear C-2-V curves indicate the presence of interface states at the Ag-nanocrystalline ZnSnN2 interface. The application of nanocrystalline ZnSnN2 in heterojunction solar cells was also demonstrated.