相关参考文献
注意：仅列出部分参考文献，下载原文获取全部文献信息。Transfer-Enabled Fabrication of Graphene Wrinkle Arrays for Epitaxial Growth of AlN Films
Yuqing Song et al.
ADVANCED MATERIALS (2022)
Lattice Polarity Manipulation of Quasi-vdW Epitaxial GaN Films on Graphene Through Interface Atomic Configuration
Fang Liu et al.
ADVANCED MATERIALS (2022)
Pinhole-seeded lateral epitaxy and exfoliation of GaSb films on graphene-terminated surfaces
Sebastian Manzo et al.
NATURE COMMUNICATIONS (2022)
Impact of 2D-3D Heterointerface on Remote Epitaxial Interaction through Graphene
Hyunseok Kim et al.
ACS NANO (2021)
A Reconfigurable Remotely Epitaxial VO2 Electrical Heterostructure
Yuwei Guo et al.
NANO LETTERS (2020)
Graphene-Assisted Epitaxy of Nitrogen Lattice Polarity GaN Films on Non-Polar Sapphire Substrates for Green Light Emitting Diodes
Fang Liu et al.
ADVANCED FUNCTIONAL MATERIALS (2020)
Quasi van der Waals epitaxy nitride materials and devices on two dimension materials
Dongdong Liang et al.
NANO ENERGY (2020)
New insights in the lattice dynamics of monolayers, bilayers, and trilayers of WSe2 and unambiguous determination of few-layer-flakes' thickness
Marta De Luca et al.
2D MATERIALS (2020)
A Laterally Overgrown GaN Thin Film Epitaxially Separated from but Physically Attached to an SiO2-Patterned Sapphire Substrate
Donghoi Kim et al.
CRYSTAL GROWTH & DESIGN (2020)
Remote heteroepitaxy of GaN microrod heterostructures for deformable light-emitting diodes and wafer recycle
Junseok Jeong et al.
SCIENCE ADVANCES (2020)
Selective-Area Remote Epitaxy of ZnO Microrods Using Multilayer-Monolayer-Patterned Graphene for Transferable and Flexible Device Fabrications
Junseok Jeong et al.
ACS APPLIED NANO MATERIALS (2020)
Improved Epitaxy of AlN Film for Deep-Ultraviolet Light-Emitting Diodes Enabled by Graphene
Zhaolong Chen et al.
ADVANCED MATERIALS (2019)
Integration of bulk materials with two-dimensional materials for physical coupling and applications
Sang-Hoon Bae et al.
NATURE MATERIALS (2019)
Non-edge-triggered inversion from Ga polarity to N polarity of c-GaN domains on an SiO2 mask during epitaxial lateral overgrowth
Hyunkyu Lee et al.
JOURNAL OF APPLIED CRYSTALLOGRAPHY (2019)
Epitaxy of Single-Crystalline GaN Film on CMOS-Compatible Si(100) Substrate Buffered by Graphene
Yuxia Feng et al.
ADVANCED FUNCTIONAL MATERIALS (2019)
Polarity and threading dislocation dependence of the surface morphology of c-GaN films exposed to HCl vapor
Hyunkyu Lee et al.
JOURNAL OF MATERIALS CHEMISTRY C (2018)
Remote heteroepitaxy across graphene: Hydrothermal growth of vertical ZnO microrods on graphene-coated GaN substrate
Junseok Jeong et al.
APPLIED PHYSICS LETTERS (2018)
Polarity governs atomic interaction through two-dimensional materials
Wei Kong et al.
NATURE MATERIALS (2018)
Remote homoepitaxy of ZnO microrods across graphene layers
Junseok Jeong et al.
NANOSCALE (2018)
Remote epitaxy through graphene enables two-dimensional material-based layer transfer
Yunjo Kim et al.
NATURE (2017)
Ab initio study of aspirin adsorption on single-walled carbon and carbon nitride nanotubes
Yongju Lee et al.
PHYSICAL CHEMISTRY CHEMICAL PHYSICS (2017)
Catalytic decomposition of SiO2 by Fe and the effect of Cu on the behavior of released Si species
Dongsoo Jang et al.
CURRENT APPLIED PHYSICS (2016)
The determining factor of a preferred orientation of GaN domains grown on m-plane sapphire substrates
Miyeon Jue et al.
SCIENTIFIC REPORTS (2015)
Self-regulated in-plane polarity of [1(1)over-bar00]-oriented GaN domains coalesced from twins grown on a SiO2-patterned m-plane sapphire substrate
Hyemi Lee et al.
APPLIED PHYSICS LETTERS (2014)
Architectured van der Waals epitaxy of ZnO nanostructures on hexagonal BN
Hongseok Oh et al.
NPG ASIA MATERIALS (2014)
Spontaneous inversion of in-plane polarity of a-oriented GaN domains laterally overgrown on patterned r-plane sapphire substrates
Donggyu Shin et al.
JOURNAL OF APPLIED CRYSTALLOGRAPHY (2013)
Nitridation- and Buffer-Layer-Free Growth of [1(1)over-bar00]-Oriented GaN Domains on m-Plane Sapphire Substrates by Using Hydride Vapor Phase Epitaxy
Yeonwoo Seo et al.
APPLIED PHYSICS EXPRESS (2012)
Analysis of Morphological Evolution of Crystalline Domains in Nonequilibrium Shape by Using Minimization of Effective Surface Energy
Yeonwoo Seo et al.
CRYSTAL GROWTH & DESIGN (2011)
Controlled growth and surface morphology evolution of m-oriented GaN faceted-domains on SiO2-patterned m-plane sapphire substrates
Yeonwoo Seo et al.
APPLIED PHYSICS LETTERS (2010)
Study of the epitaxial relationships between III-nitrides and M-plane sapphire
Philippe Vennegues et al.
JOURNAL OF APPLIED PHYSICS (2010)
Hydrogen Adsorption on sp2-Bonded Carbon Structures: Ab-initio Study
Young-Kyun Kwon
JOURNAL OF THE KOREAN PHYSICAL SOCIETY (2010)
Self-clusterized glycines on single-walled carbon nanotubes for alcohol sensing
Hyun Jae Song et al.
JOURNAL OF PHYSICAL CHEMISTRY C (2008)
Growth evolution in sidewall lateral epitaxial overgrowth (SLEO)
Bilge Imer et al.
JOURNAL OF CRYSTAL GROWTH (2007)
Semiempirical GGA-type density functional constructed with a long-range dispersion correction
Stefan Grimme
JOURNAL OF COMPUTATIONAL CHEMISTRY (2006)
Glassy materials as a hydrogen storage medium: Density functional calculations
SH Jhi et al.
PHYSICAL REVIEW B (2005)
A new selective area lateral epitaxy approach for depositing a-plane GaN over r-plane sapphire
CQ Chen et al.
JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS (2003)
A direct optimization method for calculating density functionals and exchange-correlation potentials from electron densities
Q Wu et al.
JOURNAL OF CHEMICAL PHYSICS (2003)
分享论文
