Thru-Hole Epitaxy: A Highway for Controllable and Transferable Epitaxial Growth

Controllable growth and facile transferability of a crystalline film with desired characteristics, acquired by tuning composition and crystallographic orientation, become highly demanded for advanced flexible devices. Here the desired crystallographic orientations and facile transferability of a crystalline film can be achieved by thru-hole epitaxy in a straightforward and undemanding manner with no limitation on the layer number and polarity of a 2D space layer and the surface characteristics. The crystallographic alignment can be established by the connectedness of the grown material to the substrate through a small net cross-sectional area of thru-holes, which also allows the straightforward detachment of the grown material. Thru-hole epitaxy can be adopted for the realization of advanced flexible devices on large scale with desired crystallographic orientation and facile transferability.

Automated summary

Controllable growth and facile transferability of crystalline films with desired characteristics are in high demand for advanced flexible devices. Thru-hole epitaxy provides a straightforward and undemanding method to achieve the desired crystallographic orientations and easy transferability of crystalline films, without limitations on the layer number, polarity, and surface characteristics of the 2D space layer. Connectedness of the grown material to the substrate through small net cross-sectional area of thru-holes enables crystallographic alignment and easy detachment of the grown material. Thru-hole epitaxy shows great potential for large-scale realization of advanced flexible devices with desired crystallographic orientation and facile transferability.