Tantalum pentoxide (Ta2O5 and Ta2O5-x)-based memristor for photonic in-memory computing application

Photonic in-memory computing exhibits promising potential to address the inherent limitations of traditional von Neumann architecture. In this study, we demonstrate a tantalum pentoxide (Ta2O5 and Ta2O5_x)-based memristor as a non-volatile memory for photonic in-memory computing functions. The active layer of the memristor on a heavily doped N-Si substrate comprises two films of Ta2O5 and Ta2O5_x with a size of 3 x 3 mu m2 of which roughness root-mean-square values are 1.25 nm and 1.59 nm, respectively. A controllable electrical behavior transition from write-once-read-many-times (WORM) memory to resistive random-access memory (RRAM) is achieved by changing the depositional sequence. Benefitting from the visible light response, the in situ photonic Boolean logic operations (AND/OR) are achieved in the RRAM device by mixing the light and electric signals, and the power consumption of an AND or OR operation consumes 4.503 nJ and 4.526 nJ, respec-tively, proving the superior photonic in-memory computing potential. The basic logic IMPLICATION operation is implemented by performing electrical regulation in a circuit with two RRAM devices connected in parallel. Finally, a 5 x 5 RRAM array is developed and thereafter, the array-level logic for image processing applications is realized. The proposed tantalum pentoxide-based memristors possess great potential in constructing efficient in -memory computing architectures.

Automated summary

This study demonstrates the potential of photonic in-memory computing by using a tantalum pentoxide-based memristor as a non-volatile memory. The controllable transition from write-once-read-many-times (WORM) memory to resistive random-access memory (RRAM) is achieved by changing the depositional sequence. In situ photonic Boolean logic operations (AND/OR) are achieved in the RRAM device by combining light and electric signals, showing superior photonic in-memory computing potential.