期刊
NANO ENERGY
卷 106, 期 -, 页码 -出版社
ELSEVIER
DOI: 10.1016/j.nanoen.2022.108074
关键词
Perovskite; RRAM; Mica; Photoelectricity; Ag Nanowires
Metal halide perovskites are attracting attention for use in flexible resistive random access memory (RRAM) due to their good photoelectric regulation, high ON/OFF ratios, and low fabrication costs. In this study, mica/silver nanowires welded with aluminum-doped zinc oxide (mica/AgNWs@AZO) substrates were successfully fabricated, providing high-temperature resistance, high flexibility, high conductivity, and good stability. The mica/AgNWs@AZO substrate showed better performance compared to a commercial PET/ITO substrate, and the perovskite CsPbBr3 nanocrystal (NC) RRAM constructed on the mica/AgNWs@AZO substrate exhibited improved ON/OFF ratios under bending cycles.
Metal halide perovskites have attracted considerable attention for use in flexible resistive random access memory (RRAM), due to their good photoelectric regulation, high ON/OFF ratios, and low fabrication costs. Flexible conductive substrates play a crucial role in improving RRAM device performance. Herein, mica/silver nanowires welded with aluminum-doped zinc oxide (mica/AgNWs@AZO) substrates with high-temperature resistance, high flexibility, high conductivity, and good stability have been successfully fabricated. The average sheet resistance 3.5 Omega sq(-1) of the conductive mica substrate is 68% lower than that of a commercial PET/ITO, and it remains stable below 13.1 Omega sq(-1) under 200 degrees C. The maximum conductivity of the mica/AgNWs@AZO substrate can reach 58 S/m after 64 h of tensile stress bending at a radius of 20 mm. Perovskite CsPbBr3 nanocrystal (NC) RRAM is constructed on the mica/AgNWs@AZO substrate. The ON/OFF ratio 10(3) of the device in light is 10(2) times higher than that in dark under 5000 bending cycles. Flexible perovskite RRAM is a promising candidate for next-generation-logic, adaptive, non-volatile memory devices.
作者
我是这篇论文的作者
点击您的名字以认领此论文并将其添加到您的个人资料中。
推荐
暂无数据