Continuous, crystalline Sb2S3 ultrathin light absorber coatings in solar cells based on photonic concentric p-i-n heterojunctions

Many modern types of solar cells that rely exclusively on earth-abundant non-toxic materials include interfaces between a heavier metal chalcogenide and another type of semiconductor. Often, the chemical (adhesion) and physical (charge transfer) characteristics of those interfaces are the defining factors for the final device perfor-mance. Here, we describe that a ZnS adhesion layer is not sufficient to prevent the dewetting of Sb2S3 upon annealing a thin layer of it on an oxidic surface if the substrate is not planar and features highly curved surfaces. An ALD-coated sacrificial capping layer of ZnO prevents the morphological rearrangements of Sb2S3 during thermal crystallization and can be removed subsequently. When implemented towards a photovoltaic p-i-n heterojunction, this strategy furnishes perfect conformality of the layer stack but unsatisfactory performance. The correlation of interface chemistry with the electrical properties and the device performance identifies a reducing effect of ZnO atomic layer deposition chemistry on the Sb2S3 surface as the cause of Zn diffusion into the light absorbing semiconductor. This deleterious doping can be prevented by a preliminary oxidative treatment of the Sb2S3 surface with ozone. When applied to a structured substrate consisting of ordered arrays of nanospheres, this approach yields the first ever concentric p-i-n heterojunction solar cells with photonic light trapping effect-a geometry which in comparison with standard scattering layers'on top' inherently generates a very large refractive index contrast. In the red part of the visible spectrum, light absorption amounts to the value expected with four passes through a planar layer of the thickness used here (35 nm Sb2S3). This effect allows us to demonstrate >5% overall solar energy conversion efficiency with only 35 nm of a simple light absorber phase that uses no toxic, rare materials.

Automated summary

This study addresses the issue of morphological rearrangement of Sb2S3 during thermal crystallization by introducing a sacrificial capping layer of ZnO and oxidative treatment of the Sb2S3 surface. The concentric p-i-n heterojunction solar cells fabricated using this approach show a high refractive index contrast and achieve >5% overall solar energy conversion efficiency with a simple light absorber phase of only 35 nm thickness.