Influence of O2 Flow Rate on the Properties of Ga2O3 Growth by RF Magnetron Sputtering

The influence of the O-2 flow rate on the properties of gallium oxide (Ga2O3) by RF magnetron sputtering was studied. X-ray diffraction (XRD), atomic force microscopy (AFM), scanning electron microscopy (SEM), transmittance spectra, and photoluminescence (PL) spectra have been employed to study the Ga2O3 thin films. With the increase in oxygen flow rate, both the crystal quality and luminescence intensity of the Ga2O3 samples first decrease and then enhance. All these observations suggested that the reduction in the oxygen defect density is responsible for the improvement in the crystal quality and emission intensity of the material. Our results demonstrated that high-quality Ga2O3 materials could be obtained by adjusting the oxygen flow rate.

Automated summary

The influence of O-2 flow rate on the properties of Ga2O3 thin films prepared by RF magnetron sputtering was investigated. XRD, AFM, SEM, transmittance spectra, and PL spectra were used to study the Ga2O3 films. It was found that the crystal quality and luminescence intensity of the Ga2O3 samples initially decreased and then increased with increasing oxygen flow rate. This suggests that reducing the oxygen defect density is responsible for the improved crystal quality and emission intensity of the material. It was demonstrated that high-quality Ga2O3 materials could be obtained by adjusting the oxygen flow rate.