Amorphous InGaZnO Thin-Film Transistors with Double-Stacked Channel Layers for Ultraviolet Light Detection

Amorphous InGaZnO thin film transistors (a-IGZO TFTs) with double-stacked channel layers (DSCL) were quite fit for ultraviolet (UV) light detection, where the best DSCL was prepared by the depositions of oxygen-rich (OR) IGZO followed by the oxygen-deficient (OD) IGZO films. We investigated the influences of oxygen partial pressure (P-O) for DSCL-TFTs on their sensing abilities by experiments as well as Technology Computer Aided Design (TCAD) simulations. With the increase in P-O values for the DSCL depositions, the sensing parameters, including photogenerated current (I-photo), sensitivity (S), responsivity (R), and detectivity (D*) of the corresponding TFTs, apparently degraded. Compared with P-O variations for the OR-IGZO films, those for the OD-IGZO depositions more strongly influenced the sensing performances of the DSCL-TFT UV light detectors. The TCAD simulations showed that the variations of the electron concentrations (or oxygen vacancy (V-O) density) with P-O values under UV light illuminations might account for these experimental results. Finally, some design guidelines for DSCL-TFT UV light detectors were proposed, which might benefit the potential applications of these novel semiconductor devices.

Automated summary

The influences of oxygen partial pressure on double-stacked channel layers in amorphous InGaZnO thin film transistors for UV light detection were investigated through experiments and simulations. The sensing abilities of the TFTs, including photogenerated current, sensitivity, responsivity, and detectivity, degraded with the increase in oxygen partial pressure. The variations of electron concentrations with oxygen partial pressure under UV light illuminations might explain these experimental results.