期刊
ECS JOURNAL OF SOLID STATE SCIENCE AND TECHNOLOGY
卷 12, 期 1, 页码 -出版社
ELECTROCHEMICAL SOC INC
DOI: 10.1149/2162-8777/acb1d5
关键词
Nanodevices; CNT; CNTFET; Theory and Modelling; Analog Circuits; Amplifier Design
In this paper, we propose a method to study the relationship between the performance of a CNTFET amplifier and the parameters of a CNT. We analyze the effects on a linear common source amplifier using a N type CNTFET with a resistive gate polarization. We present the analysis for a zig-zag CNT and show that F-3dB has an inverse dependence on the length and decreases at higher structural indices.
In this paper we propose a procedure to study the dependence of a CNTFET amplifier performance on CNT parameters that fully identify the geometrical properties of a regular CNT. In particular these parameters are the length and structural indices (n,m) of CNT. We analyse the effects on a linear common source amplifier using a N type CNTFET with a resistive gate polarization. We polarize at a fixed drain voltage and current, gradually changing the CNT parameters. As regards the indices, we present the analysis for a zig-zag CNT. However the proposed procedure can be applied to other types of CNT. We show the effect on gain, on the 3 dB cut off frequency, F-3dB, on the input and output resistances, obtaining that F-3dB has a clear inverse dependence on the length and that also decreases at higher structural indices for zig-zag CNT.
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