期刊
JOURNAL OF PHYSICS-CONDENSED MATTER
卷 28, 期 4, 页码 -出版社
IOP Publishing Ltd
DOI: 10.1088/0953-8984/28/4/045002
关键词
Germanene; x-ray absorption spectroscopy; RHEED; Ab initio structural modeling; angular resolved photoemission spectroscopy
资金
- ESRF [MA-1983]
- CNR
- INFN
- 2D-NANOLATTICES Grant of the Future and Emerging Technologies (FET) program of the European Commission 7th Framework Program [270749]
In this work, a structural analysis of Ge layers deposited by molecular beam epitaxy (MBE) on Ag(1 1 1) surfaces with and without an AlN buffer layer have been investigated by x-ray Absorption Spectroscopy (XAS) at the Ge-K edge. For the Ge layers deposited on h-AlN buffer layer on Ag(1 1 1) an interatomic Ge-Ge distance RGe-Ge = 2.38 angstrom is found, typical of 2-Dimensional Ge layers and in agreement with the theoretical predictions for free standing low-buckled Germanene presented in literature. First principles calculations, performed in the density functional theory (DFT) framework, supported the experimental RHEED and XAS findings, providing evidence for the epitaxial 2-D Ge layer formation on h-AlN/Ag(1 1 1) template.
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