Enhanced Optical and Electronic Properties of Silicon Nanosheets by Phosphorus Doping Passivation

In this paper, we use the spin-on-dopant technique for phosphorus doping to improve the photoelectric properties of soft-chemical-prepared silicon nanosheets. It was found that the luminescence intensity and luminescence lifetime of the doped samples was approximately 4 fold that of the undoped samples, due to passivation of the surface defects by phosphorus doping. Meanwhile, phosphorus doping combined with high-temperature heat treatment can reduce the resistivity of multilayer silicon nanosheets by 6 fold compared with that of as-prepared samples. In conclusion, our work brings soft-chemical-prepared silicon nanosheets one step closer to practical application in the field of optoelectronics.

Automated summary

In this study, the spin-on-dopant technique was used to phosphorus dope soft-chemical-prepared silicon nanosheets, leading to improved photoelectric properties. It was observed that the doped samples exhibited approximately a 4-fold increase in luminescence intensity and luminescence lifetime compared to the undoped samples, attributed to the passivation of surface defects by phosphorus doping. Additionally, the combination of phosphorus doping and high-temperature heat treatment resulted in a 6-fold reduction in resistivity of multilayer silicon nanosheets compared to as-prepared samples. Overall, this research brings soft-chemical-prepared silicon nanosheets one step closer to practical application in optoelectronics.