期刊
ADVANCED MATERIALS
卷 27, 期 43, 页码 7004-+出版社
WILEY-V C H VERLAG GMBH
DOI: 10.1002/adma.201501757
关键词
-
类别
资金
- Mitsubishi Chemical Center for Advanced Materials at UCSB - Mitsubishi Chemical Corporation (Japan)
The mechanism of electrical instability and the double slope of p-type organic field-effect transistors (OFETs) fabricated from low-bandgap donor-acceptor copolymers are resolved. Those polymers enable electron conduction in the device, which leads to electron trapping and consequent formation of -SiO-. This causes a turn-on voltage shift, hole-mobility increase, and double-slope occurrence. These findings tremendously impact the molecular design and device engineering of OFETs.
作者
我是这篇论文的作者
点击您的名字以认领此论文并将其添加到您的个人资料中。
推荐
暂无数据