期刊
MATERIALS
卷 15, 期 24, 页码 -出版社
MDPI
DOI: 10.3390/ma15248784
关键词
scintillator; radiation detection; near-infrared luminescence; Bi4Si3O12
类别
资金
- Japan Society for the Promotion of Science
- [22H00309]
- [22H02939]
- [21H03733]
- [21H03736]
- [22K18997]
In this study, undoped and Nd-doped BSO crystals with different Nd doping levels were synthesized by the floating zone method. It was found that the samples exhibited similar photoluminescence and X-ray-induced scintillation properties, with variations in PL quantum yield and afterglow levels based on the Nd doping level.
Undoped, 0.5, 1.0, and 2.0% Nd-doped Bi4Si3O12 (BSO) crystals were synthesized by the floating zone method. Regarding photoluminescence (PL) properties, all samples had emission peaks due to the 6p-6s transitions of Bi3+ ions. In addition, the Nd-doped samples had emission peaks due to the 4f-4f transitions of Nd3+ ions as well. The PL quantum yield of the 0.5, 1.0, and 2.0% Nd-doped samples in the near-infrared range were 67.9, 73.0, and 56.6%, respectively. Regarding X-ray-induced scintillation properties, all samples showed emission properties similar to PL. Afterglow levels at 20 ms after X-ray irradiation of the undoped, 0.5, 1.0, and 2.0% Nd-doped samples were 192.3, 205.9, 228.2, and 315.4 ppm, respectively. Dose rate response functions had good linearity from 0.006 to 60 Gy/h for the 1.0% Nd-doped BSO sample and from 0.03 to 60 Gy/h for the other samples.
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