期刊
JOURNAL OF PHYSICS-CONDENSED MATTER
卷 29, 期 4, 页码 -出版社
IOP PUBLISHING LTD
DOI: 10.1088/1361-648X/29/4/043003
关键词
thin film growth; molecular beam epitaxy; organic semiconductors; GISAXS; x-ray reflectivty; XRD; solution processing
资金
- DESY Photon Science
- DFG 'HIOS' program [SFB 951]
Thin-film growth is important for novel functional materials and new generations of devices. The non-equilibrium growth physics involved is very challenging, because the energy landscape for atomic scale processes is determined by many parameters, such as the diffusion and Ehrlich-Schwoebel barriers. We review the in situ real-time techniques of x-ray diffraction (XRD), x-ray growth oscillations and diffuse x-ray scattering (GISAXS) for the determination of structure and morphology on length scales from angstrom to mu m. We give examples of time resolved growth experiments mainly from molecular thin film growth, but also highlight growth of inorganic materials using molecular beam epitaxy (MBE) and electrochemical deposition from liquids. We discuss how scaling parameters of rate equation models and fundamental energy barriers in kinetic Monte Carlo methods can be determined from fits of the real-time x-ray data.
作者
我是这篇论文的作者
点击您的名字以认领此论文并将其添加到您的个人资料中。
推荐
暂无数据