4.4 Article

Enhanced electronic transport properties of Te roll-like nanostructures

期刊

BEILSTEIN JOURNAL OF NANOTECHNOLOGY
卷 13, 期 -, 页码 1284-1291

出版社

BEILSTEIN-INSTITUT
DOI: 10.3762/bjnano.13.106

关键词

electrical characterization; field-effect transistors; hopping conduction; nanobelts; tellurium

资金

  1. Conselho Nacional de Desenvolvimento Cientifico e Tecnologico (CNPq) [406139/2018-0, 305808/2018-4]
  2. CAPES
  3. Fundacao de Amparo a Pesquisa do Estado de Minas Gerais (FAPEMIG) [APQ-03044-17]
  4. Fundacao Araucaria

向作者/读者索取更多资源

The electronic transport properties of Te roll-like nanostructures were investigated in a broad temperature range. The nanostructures exhibited p-type conductivity with enhanced hole mobility at low temperatures, and nearest-neighbor hopping conduction dominated at high temperatures. These results demonstrate the potential applications of these nanostructures in nanodevices.
In this work, the electronic transport properties of Te roll-like nanostructures were investigated in a broad temperature range by fabricating single-nanostructure back-gated field-effect-transistors via photolithography. These one-dimensional nanostructures, with a unique roll-like morphology, were produced by a facile synthesis and extensively studied by scanning and transmission elec-tron microscopy. The nanostructures are made of pure and crystalline Tellurium with trigonal structure (t-Te), and exhibit p-type conductivity with enhanced field-effect hole mobility between 273 cm2/Vs at 320 K and 881 cm2/Vs at 5 K. The thermal ionization of shallow acceptors, with small ionization energy between 2 and 4 meV, leads to free-hole conduction at high temperatures. The free-hole mobility follows a negative power-law temperature behavior, with an exponent between -1.28 and -1.42, indicating strong phonon scattering in this temperature range. At lower temperatures, the electronic conduction is dominated by nearest-neighbor hopping (NNH) conduction in the acceptor band, with a small activation energy ENNH approximate to 0.6 meV and an acceptor concen-tration of NA approximate to 1 x 1016 cm-3. These results demonstrate the enhanced electrical properties of these nanostructures, with a small disorder, and superior quality for nanodevice applications.

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