期刊
JOURNAL OF PHYSICS D-APPLIED PHYSICS
卷 49, 期 26, 页码 -出版社
IOP PUBLISHING LTD
DOI: 10.1088/0022-3727/49/26/265501
关键词
boron nitride; thermal conduction; lateral heat spreader; electrical insulation
资金
- National Natural Science Foundation of China [51272153, 61574088, 11272192]
- Shanghai Jiading Governmental program
- Anhui Natural Science Project [KJHS2015B10, KJHS2015B08, KJHS2016B03]
- Swedish Board for Strategic Research (SSF) 'Scalable Nanomaterials and Solution Processable Thermoelectric Generators' [EM11-0002]
- SSF program 'Carbon Based 3 D GaN high speed electronic system' [SE13-0061]
- EU FP7 program 'Nanotherm'
The need for electrically insulating materials with a high in-plane thermal conductivity for lateral heat spreading applications in electronic devices has intensified studies of layered hexagonal boron nitride (h-BN) films. Due to its physicochemical properties, h-BN can be utilised in power dissipating devices such as an electrically insulating heat spreader material for laterally redistributing the heat from hotspots caused by locally excessive heat flux densities. In this study, two types of boron nitride based heat spreader test structures have been assembled and evaluated for heat dissipation. The test structures separately utilised a few-layer h-BN film with and without graphene enhancement drop coated onto the hotspot test structure. The influence of the h-BN heat spreader films on the temperature distribution across the surface of the hotspot test structure was studied at a range of heat flux densities through the hotspot. It was found that the graphene-enhanced h-BN film reduced the hotspot temperature by about 8-10 degrees C at a 1000 W cm(-2) heat flux density, a temperature decrease significantly larger than for h-BN film without graphene enhancement. Finite element simulations of the h-BN film predict that further improvements in heat spreading ability are possible if the thermal contact resistance between the film and test chip are minimised.
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