期刊
JOURNAL OF PHYSICS D-APPLIED PHYSICS
卷 49, 期 9, 页码 -出版社
IOP PUBLISHING LTD
DOI: 10.1088/0022-3727/49/9/095109
关键词
CdS; CBD; tunability of optoelectronic properties; flat-band potential
资金
- National Science Foundation of Sri Lanka [RG/12/BS/03]
- Higher Degree Committee of the University of Peradeniya [AC/URF/2014/03]
The tunability of the band-gap value and electron affinity of the n-CdS by adjusting the growth parameters is very important as it paves the way to improve the efficiency of CdS-based solar cells by adjusting the band lineup with other p-type semiconductors. In this respect, polycrystalline n-CdS thin films were grown on FTO glass substrates at different bath temperatures (40-80 degrees C) by the chemical bath deposition technique. The structural, morphological and optoelectronic properties of CdS thin films were studied using x-ray diffraction, scanning electron microscopy, UV-Vis spectrometry, profilometry, atomic force microscopy, photoelectrochemical and Mott-Schottky measurements. Absorption measurements reveal that an energy-gap value of n-CdS can be adjusted from 2.27 to 2.57 eV and Mott-Schottky measurements indicate that the flat-band potential is increased from -699 to -835 V with respect to a Ag/AgCl electrode by decreasing the deposition bath temperature from 60 to 40 degrees C. This tunability of optoelectronic properties of n-CdS is very useful for applications in thin film solar cells and other devices.
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