期刊
JOURNAL OF PHYSICS D-APPLIED PHYSICS
卷 49, 期 39, 页码 -出版社
IOP PUBLISHING LTD
DOI: 10.1088/0022-3727/49/39/395104
关键词
dissipative particle dynamics; Ewald sums; point charges; charge distributions
资金
- State Key Program for Basic Research of China [2011CB301900, 2011CB922100]
- Major Industrial Research and Development Plan of Jiangsu Province [BE2015155]
- Priority Academic Program Development of Jiangsu Higher Education Institutions
Vertical Schottky barrier diodes (SBDs) based on amorphous indium-gallium-zinc-oxide (a-IGZO) with either a top or bottom Schottky contact are fabricated by controlling the oxygen partial pressure during a-IGZO deposition. Although Au electrodes are employed for both Schottky and Ohmic contacts, it is found that Schottky contacts are preferentially formed on a-IGZO film in lower oxygen vacancy concentrations. The effect of negative bias stress on device performance is studied. The Schottky barrier height and series resistance of the a-IGZO SBD are found to increase upon negative bias stress, which is correlated with a reduction of the trap state and background carrier concentration within the a-IGZO film. A physical model based on subgap state transitions from ionized V-O(2+) states to neutralized V-O states is proposed to explain the observed electrical instability behavior.
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