期刊
WAVES IN RANDOM AND COMPLEX MEDIA
卷 -, 期 -, 页码 -出版社
TAYLOR & FRANCIS LTD
DOI: 10.1080/17455030.2023.2166151
关键词
Quantum plasma; semiconductor; surface plasmon; instability
This work theoretically investigates the propagation of surface plasmons in a quantum collisional semiconductor plasma using the quantum hydrodynamic model. The general dispersion equation of surface plasmons is derived and solved, taking into account collisional effects and quantum tunneling of electrons and holes. It is found that collisions play a significant role in the decay or growth of surface plasmons. Additionally, the quantum tunneling of electrons and holes is shown to increase the phase velocity, group velocity, and growth rate of instability. The growth rate of instability is also decreased with the increase of the ratio of hole density to electron density and the ratio of electron effective mass to hole effective mass.
In this work, the propagation of surface plasmons in a quantum collisional semiconductor plasma is theoretically investigated using the quantum hydrodynamic model. The general dispersion equation of surface plasmons is deduced and solved in the presence of collisional effects and quantum tunneling of electrons and holes. It is shown that collisions play a significant role in the decay or growth of surface plasmons. Moreover, it is found that the quantum tunneling of electrons and holes increases the phase velocity, the group velocity, and the growth rate of instability. It is also indicated that the growth rate of instability is decreased with the increase of the ratio of hole density to electron density and the ratio of electron effective mass to hole effective mass.
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