4.5 Article

The capacitance/conductance and surface state intensity characteristics of the Schottky structures with ruthenium dioxide-doped organic polymer interface

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SYNTHETIC METALS
卷 292, 期 -, 页码 -

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ELSEVIER SCIENCE SA
DOI: 10.1016/j.synthmet.2022.117243

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Doped-organic interface; Conductance method; Interface states; Relaxation time; Frequency-dependent characteristics

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The electrical behaviors of Schottky structures with a RuO2-doped PVC interface were studied over a wide frequency range and voltages. The effects on the structure's capacitance/conductance and surface state intensity were discussed. Significant increases in capacitance and conductance values were observed in the depletion zone. The series resistance decreased with increasing frequency and the distribution of surface state intensity varied with voltage and frequency.
The electrical behaviors of the Schottky structures with a ruthenium dioxide (RuO2) doped-polyvinyl chloride (PVC) interface were executed with a wide frequency range (from 1 kHz to 5 MHz) and voltages. The interface was obtained by dispersing RuO2 nanopowder as colloidal particles into the PVC organic polymer using the ultrasonic irradiation method. The capacitance/conductance and surface state intensity (Nss) effects of this interface on the structure have been widely discussed. Remarkable increases in capacitance (C) and conductance (G/.) values were found, especially in the depletion zone. The series resistance of the structure (Rs) value decreases strongly with increasing frequency for + 3.5 V, down to a value of approximately 48.43 O at 5 MHz. Furthermore, the effect of the Rs is seen in the Cc and Gc/. curves in the weak and strong accumulation regions. While the maximum value of the Nss is 1.42 x 10(13) eV 1.cm(-2) at 0.478 eV, its minimum value is 1.23 x 1013 eV 1.cm (-) at 0.540 eV. The relaxation time (t) values change from 2.40 x 10(-5) to 2.03 x 10(-4) s in exponentially increasing values. It can be stated that there is an inverse relationship between the t and distribution of the Nss values. These distributions vary depending on the applied voltage and frequency.

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