期刊
ADVANCED MATERIALS
卷 27, 期 17, 页码 2797-+出版社
WILEY-V C H VERLAG GMBH
DOI: 10.1002/adma.201500039
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资金
- State Key Project of Fundamental Research of China (973 Program) [2012CB933004]
- National Natural Science Foundation of China [51303194, 61328402, 11474295, 11274322, 61306152]
- Instrument Developing Project of the Chinese Academy of Sciences [YZ201327]
- Youth Innovation Promotion Association of the Chinese Academy of Sciences, Ningbo Major Project for Science and Technology [2014B11011]
- Ningbo Natural Science Foundations [2013A610031]
- Ningbo International Cooperation Projects [2012D10018, 2014D10005]
A multifunctional optoelectronic resistive switching memory, composed of a simple ITO/CeO2-x/AlOy/Al structure, is demonstrated. Arising from the photoinduced detrapping, electrode-injection and retrapping of electrons in the CeO2-x/AlOy/Al interfacial region, the device shows broadband, linear, and persistent photoresponses that can be used for the integration of demodulating, arithmetic, and memory functions in a single device for future optoelectronic interconnect systems.
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