☆ 4.8 Review

Research Process on Photodetectors based on Group-10 Transition Metal Dichalcogenides

SMALL (2023)

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A review of the synthesis, fabrication, and recent advances in mixed dimensional heterostructures for optoelectronic devices applications

Waqas Ahmad et al.

Summary: Low dimensional materials are promising for electronic and optoelectronic devices due to their unique electronic structure and physiochemical properties. Mixed dimensional heterostructures (MDHs) combine different nanomaterials with various dimensionalities, offering great potential for a wide range of applications. Various dimensionalities of MDHs, especially 2D materials, enhance charge carrier mobilities, optical absorption, and response, making them ideal for developing next-generation optoelectronic devices.

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Article Nanoscience & Nanotechnology

Schottky-Contacted WSe2 Hot-Electron Photodetectors with Fast Response and High Sensitivity

Mingliang Zhang et al.

Summary: By utilizing hot-electron transportation, high-performance WSe2 photodetectors with fast response and low dark current were developed in this study. These detectors also demonstrated high responsivity and detectivity under specific light power, providing an alternative route for ultrasensitive photodetectors with fast response.

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Fourfold Polarization-Sensitive Photodetector Based on GaTe/MoS2 van der Waals Heterojunction

Jin Tan et al.

Summary: Integrated polarization-sensitive photodetectors fabricated by geometric anisotropic 2D materials have gained increasing attention in recent years. The successful construction of self-driven and polarization-sensitive photodetectors based on GaTe/MoS2 p-n van der Waals (vdW) heterojunctions was demonstrated using mechanical exfoliation and dry transfer methods. The fabricated GaTe/MoS2 vdW heterojunctions exhibit ambipolar behavior with high rectification ratio, responsivity under 532 nm illumination, and photocurrent polarization with fourfold anisotropy and high polarization ratio.

ADVANCED ELECTRONIC MATERIALS (2022)

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Review Chemistry, Applied

Layered double hydroxide (LDH)-based materials: A mini-review on strategies to improve the performance for photocatalytic water splitting

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JOURNAL OF ENERGY CHEMISTRY (2022)

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Wafer-Scale Synthesis of 2D Dirac Heterostructures for Self-Driven, Fast, Broadband Photodetectors

Wenzhi Yu et al.

Summary: This study reports a highly controllable synthesis method for PtTe2/graphene two-dimensional Dirac heterostructures and demonstrates their potential applications in photodetection, with a wide range of broadband detection and fast response time.

ACS NANO (2022)

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Pentagonal 2D Transition Metal Dichalcogenides: PdSe2 and Beyond

Qijie Liang et al.

Summary: This review highlights the important developments in pentagonal transition metal dichalcogenides (TMDs) and their functionalities in neuromorphic computing, transistors, photodetection and catalysts. The strategies for modifying their physical and chemical properties, as well as device performance, are discussed. The forward-looking outlook of pentagonal 2D materials is also presented.

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Waveguide-Integrated PdSe2 Photodetector over a Broad Infrared Wavelength Range

Jianghong Wu et al.

Summary: Integration of PdSe2 with silicon waveguide enables the development of photodetectors with high responsivity, low noise, high bandwidth, and high data rate. This integration provides new opportunities for the application of van der Waals materials on integrated photonic platforms and shows great potential for various applications in the infrared range.

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Stretchable photodetectors based on 2D materials: materials synthesis, fabrications and applications

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Summary: This review summarizes the recent advances and applications of stretchable photodetectors based on 2D materials. It provides insights into the techniques for developing stretchability, photodetection mechanisms, and assembly methodologies of 2D materials. The review discusses the key characteristics of photodetectors, recent developments in stretchable photodetectors, and basic applications using novel 2D materials. Additionally, the review explores the outlook and challenges for stretchable photodetectors based on 2D materials.

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PtSe2 Field-Effect Phototransistor with Positive and Negative Photoconductivity

Hailing Zhang et al.

Summary: By investigating the photoconductive mechanism of a few-layer PtSe2 field-effect phototransistor (FEPT), we found that both positive and negative photoconductivity can be observed. The changes in photoconductivity are attributed to the photoinduced desorption of oxygen molecules, photoinduced carriers, and the photogating effects caused by photoinduced electrons at the PtSe2/SiO2 interface.

ACS APPLIED ELECTRONIC MATERIALS (2022)

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Position-sensitive detectors based on two-dimensional materials

Wenhui Wang et al.

Summary: The article reviews recent progress in high-performance PSD based on 2D materials, discussing high-sensitive photodetectors and LPE involved in 2D photodetectors, introducing the research progress of PSD based on 2D materials and analyzing carrier dynamics in different device structures, finally summarizing functionalities and applications, as well as highlighting challenges and opportunities in this research area.

NANO RESEARCH (2021)

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Review Chemistry, Physical

Transition metal dichalcogenide-based mixed-dimensional heterostructures for visible-light-driven photocatalysis: Dimensionality and interface engineering

Xiaorong Gan et al.

Summary: Two-dimensional transition metal dichalcogenides (TMDCs) are promising building blocks for high-performance photocatalysts for visible-light-driven water splitting due to their unique physical, chemical, electronic, and optical properties. This review focuses on the fundamentals of 2D TMDC-based mixed-dimensional heterostructures, discussing surface modification, functionalization, and combination with low-dimensional nanomaterials to enhance their photocatalytic activity. Recent advances in utilizing these mixed-dimensional heterostructures as efficient visible-light-driven photocatalysts are highlighted, along with synthesis routes, modification approaches, and physiochemical mechanisms for improving their photoactivity, with insights on future opportunities and challenges for real-world applications.

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Highly Efficient, Ultrabroad PdSe2 Phototransistors from Visible to Terahertz Driven by Mutiphysical Mechanism

Zhuo Dong et al.

Summary: Palladium diselenide (PdSe2) is an ideal material for broad-spectrum photodetection with high responsivity and fast response speed, showing excellent performance in both visible-infrared and terahertz regions.

ACS NANO (2021)

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Doping-Free All PtSe2 Transistor via Thickness-Modulated Phase Transition

Tanmoy Das et al.

Summary: This study demonstrates high-performance all-PtSe2 FETs by vertically integrating a metallic thick PtSe2 source/drain onto the semiconducting ultrathin PtSe2 channel, successfully overcoming the metal contact issue in 2D semiconductors. The transferred metallic PtSe2 induces a semiconductor-to-metal phase transition in the underlying semiconducting PtSe2, achieving fully metallized source/drain and semiconducting channel within the same platform. The PtSe2 FETs exhibit excellent gate tunability, superior mobility, and low contact resistance, providing a new device paradigm for 2D nanoelectronics.

ACS APPLIED MATERIALS & INTERFACES (2021)

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Multipurpose and Reusable Ultrathin Electronic Tattoos Based on PtSe2 and PtTe2

Dmitry Kireev et al.

Summary: Wearable bioelectronics focusing on the development of advanced person-oriented biomedical devices have garnered immense interest, particularly in utilizing skin-worn smart tattoos for monitoring vital signs. The development of ultrathin platinum-based two-dimensional dichalcogenide electronic tattoos has shown promising results in monitoring human physiological vital signs, potentially leading to advanced human-machine interfaces.

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Review Chemistry, Multidisciplinary

Defect Engineering of Two-Dimensional Transition-Metal Dichalcogenides: Applications, Challenges, and Opportunities

Qijie Liang et al.

Summary: This review article highlights the role of chalcogen atomic defects in engineering 2D TMDs, particularly focusing on device performance improvements. Various approaches for creating chalcogen atomic defects and their effects on optical, electrical, and magnetic properties are systematically overviewed. The dynamic evolution and repair of chalcogen atomic defects are also discussed, along with perspectives on challenges and opportunities in the field.

ACS NANO (2021)

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Self-Driven WSe2/Bi2O2Se Van der Waals Heterostructure Photodetectors with High Light On/Off Ratio and Fast Response

Peng Luo et al.

Summary: This study reports a WSe2/Bi2O2Se Van der Waals p-n heterostructure with superior performance in photodetection, showing promising potentials for high-performance self-driven photodetector applications.

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Ternary Ta2PdS6 Atomic Layers for an Ultrahigh Broadband Photoresponsive Phototransistor

Peng Yu et al.

Summary: The newly developed 2D noble-transition-metal chalcogenides Ta2PdS6 exhibit excellent optoelectronic performance with high photoresponsivity and detectivity, as well as a broadband photoresponse. Additionally, the material shows impressive electronic performance and air stability.

ADVANCED MATERIALS (2021)

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High-responsivity PtSe2 photodetector enhanced by photogating effect

Yajie Yang et al.

Summary: A high-responsivity PtSe2 photodetector (5x10(4) A/W) was achieved through the photogating effect induced by hole-trapping states attributed to Se vacancies. Additionally, a gate-tunable transition between positive and negative photoconductances was observed under light illumination. Theoretical calculations based on the Boltzmann transport theory were used to explain the carrier transport of PtSe2, taking into account the contributions of charged impurity, acoustic phonon, and polar optical phonon scattering.

APPLIED PHYSICS LETTERS (2021)

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Optical parametric amplification by monolayer transition metal dichalcogenides

Chiara Trovatello et al.

Summary: This research demonstrates the possibility of achieving single-pass optical parametric amplification at the ultimate thickness limit using semiconducting transition metal dichalcogenides, bypassing phase-matching requirements and achieving ultrabroad amplification bandwidths. The amplification process is independent of the in-plane polarization of the signal and pump fields, paving the way for the development of atom-sized tunable sources of radiation with potential applications in nanophotonics and quantum information technology.

NATURE PHOTONICS (2021)

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Review Materials Science, Multidisciplinary

Recent Progress in Short- to Long-Wave Infrared Photodetection Using 2D Materials and Heterostructures

Xinwei Guan et al.

Summary: 2D materials show promise in optoelectronic applications, particularly in infrared detectors, due to their unique electronic, optical, and mechanical properties. Recent research focuses on the design and optimization of devices in the short-wave, mid-wave, and long-wave infrared regimes, discussing the impact of 2D material properties on device performance and the characteristics and challenges of heterostructures based on 2D materials.

ADVANCED OPTICAL MATERIALS (2021)

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Van der Waals PdSe2/WS2 Heterostructures for Robust High-Performance Broadband Photodetection from Visible to Infrared Optical Communication Band

Xiaolin Kang et al.

Summary: The development of a PdSe2/WS2 heterostructure for photodetection shows superior performance compared to single-layer WS2 devices, attributed to the type I band alignment of the heterostructure enabling broadband spectral photoresponse.

ADVANCED OPTICAL MATERIALS (2021)

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Charge Transfer Doping of 2D PdSe2 Thin Film and Its Application in Fabrication of Heterostructures

Sajeevi S. Withanage et al.

Summary: Palladium diselenide (PdSe2) is a 2D material with exotic properties that can be further manipulated through surface charge transfer doping with benzyl viologen (BV) molecules to achieve n-doping, leading to the fabrication of lateral heterojunction devices with good current rectifying behavior.

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2D WS2 Based Asymmetric Schottky Photodetector with High Performance

Wei Gao et al.

Summary: This study presents a metal-semiconductor-metal irregular WS2 photodetector with symmetric electrodes achieved by wet-transfer. The photodetector shows high zero-bias photo-responsivity, fast response speed, and high detectivity under 405 nm light.

ADVANCED ELECTRONIC MATERIALS (2021)

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Electron-beam-irradiated rhenium disulfide memristors with low variability for neuromorphic computing

Sifan Li et al.

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NPJ 2D MATERIALS AND APPLICATIONS (2021)

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Solar Cells Based on Two-Dimensional WTe2/PtXY (X, Y = S, Se) Heterostructures with High Photoelectric Conversion Efficiency and Low Power Consumption

Dingbo Zhang et al.

Summary: This study investigates the photoelectric properties of 2D heterostructures composed of WTe2 and PtXY (X, Y = S, Se) through calculations, showing good stability and high efficiency in light conversion. The findings suggest promising potential for high-performance solar cells utilizing these heterostructures.

ACS APPLIED ENERGY MATERIALS (2021)

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Low-Temperature and Large-Scale Production of a Transition Metal Sulfide Vertical Heterostructure and Its Application for Photodetectors

Chaitanya Kaluram Kanade et al.

Summary: This study successfully prepared high-quality, wafer-scale MoS2 and WS2 heterostructures using a low-temperature synthesis method; the resulting heterostructure photodetector exhibited excellent photoresponsivity and fast photoswitching characteristics; indicating the potential advantage of MoS2-WS2 heterostructures for advanced photodetectors.

ACS APPLIED MATERIALS & INTERFACES (2021)

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Electrochemically Exfoliated Platinum Dichalcogenide Atomic Layers for High-Performance Air-Stable Infrared Photodetectors

Yaping Ma et al.

Summary: A facile cathodic exfoliation approach was developed to synthesize solution-processable high-quality PtSe2 and PtTe2 atomic layers for high-performance infrared photodetection. The exfoliated PtSe2 and PtTe2 bilayer showed excellent photoresponsivity and specific detectivity, outperforming many other IR photodetectors. Furthermore, the high yield of PtSe2 and PtTe2 atomic layers dispersed in solution allowed for the easy fabrication of air-stable wafer-scale IR photodetectors.

ACS APPLIED MATERIALS & INTERFACES (2021)

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Article Chemistry, Multidisciplinary

Broken-Gap PtS2/WSe2 van der Waals Heterojunction with Ultrahigh Reverse Rectification and Fast Photoresponse

Chaoyang Tan et al.

Summary: This paper reports a broken-gap vdW heterojunction PtS2/WSe2 with bilateral accumulation region design and a large band offset, showing ultra-high rectification ratio and on/off ratio, as well as excellent photodetection properties.

ACS NANO (2021)

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Article Chemistry, Multidisciplinary

Atomic-Layer Controlled Interfacial Band Engineering at Two-Dimensional Layered PtSe2/Si Heterojunctions for Efficient Photoelectrochemical Hydrogen Production

Cheng-Chu Chung et al.

Summary: This study demonstrates an efficient photoelectrochemical conversion for direct solar-to-hydrogen production using 2D layered PtSe2/Si heterojunction photocathodes. By controlling the number of atomic layers, the heterojunction with 3 atomic layers of PtSe2 shows the best PEC performance for hydrogen production. Wafer-scale atomic-layer controlled band engineering of 2D PtSe2 thin-film catalysts integrated with Si light absorber provides an effective way for renewable energy applications in solar-to-hydrogen production.

ACS NANO (2021)

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Review Chemistry, Multidisciplinary

Emerging Opportunities for 2D Semiconductor/Ferroelectric Transistor-Structure Devices

Zheng-Dong Luo et al.

Summary: Semiconductor technology is rapidly evolving, with potential for revolutionary innovations at the material and working principle level. The combination of 2D semiconductors and functional ferroelectrics offers new working principles and enhanced device performance, with the possibility of applications beyond traditional silicon systems. Recent demonstrations of novel device concepts based on 2D semiconductor/ferroelectric heterostructures are critically reviewed, highlighting their potential for driving exciting innovations in modern electronics.

ADVANCED MATERIALS (2021)

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Review Chemistry, Multidisciplinary

Photodetectors of 2D Materials from Ultraviolet to Terahertz Waves

Qinxi Qiu et al.

Summary: 2D materials are considered promising for photodetectors due to their unique properties, but limitations such as low quantum efficiency, noise, and slow response are caused by their thinness. Current research focuses on improving the performance of 2D material photodetectors, but balancing sensitivity and response speed remains challenging.

ADVANCED MATERIALS (2021)

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Article Materials Science, Multidisciplinary

Ultraviolet-Visible-Near-infrared photodetector based on exfoliated Tungsten Selenide

Jiali Tai et al.

Summary: Two-dimensional transition metal dichalcogenides (TMDs) have properties beneficial for photodetector applications such as high carrier mobility and a wide range of band gaps. A photodetector based on exfoliated tungsten selenide (WSe2) shows stable and broadband photo response in the UV-Vis-NIR range, with a short response time, high responsivity, and detectivity. This work demonstrates the potential of WSe2 as a TMD for future applications.

MATERIALS LETTERS (2021)

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Article Chemistry, Multidisciplinary

Substitutionally Doped MoSe2 for High-Performance Electronics and Optoelectronics

Fang Zhong et al.

Summary: 2D materials, with easily tunable carrier type and concentration, show great potential in electronic and optoelectronic applications, but still require further improvement for practical use. Through substitutional doping of Ta atoms, p-type MoSe2 was successfully achieved, leading to the fabrication of outstanding homojunction photodetectors and inverters. The devices demonstrate high rectification ratio, large open-circuit voltage, and exceptional responsivity and efficiency, laying a foundation for the practical application of 2D material devices.

SMALL (2021)

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Article Multidisciplinary Sciences

NIR self-powered photodetection and gate tunable rectification behavior in 2D GeSe/MoSe2 heterojunction diode

Muhammad Hussain et al.

Summary: The novel p-GeSe/n-MoSe2 van der waal heterojunction demonstrated tunable rectifying behavior and self-powered photovoltaic characteristics, showing great potential for future applications.

SCIENTIFIC REPORTS (2021)

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Review Nanoscience & Nanotechnology

Recent Advances in 2D Materials for Photodetectors

Jian Jiang et al.

Summary: Photodetection technology, with wide practical applications in temperature monitoring, thermal image technology, and light communication systems, has been extensively studied. Photodetectors based on various 2D materials have shown excellent performance and potential, but are still facing challenges in achieving high-performance photodetectors.

ADVANCED ELECTRONIC MATERIALS (2021)

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Article Nanoscience & Nanotechnology

Electron-phonon coupling in superconducting 1T-PdTe2

Gloria Anemone et al.

Summary: The electron-phonon interaction in type II Dirac semimetallic 1T-PdTe2 has been determined using helium atom scattering, indicating a substantial electron-phonon coupling which is crucial for its superconductivity. This coupling value, along with the surface Debye temperature, accurately predicts the superconducting critical temperature, suggesting that the topological states of a Dirac cone have minimal influence on the onset of superconductivity.

NPJ 2D MATERIALS AND APPLICATIONS (2021)

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Article Nanoscience & Nanotechnology

Scalable Van der Waals Two-Dimensional PtTe2 Layers Integrated onto Silicon for Efficient Near-to-Mid Infrared Photodetection

Mashiyat Sumaiya Shawkat et al.

Summary: There is a growing interest in leveraging 2D van der Waals crystals for IR photodetection due to their unique optoelectrical properties. This study explored the use of wafer-scale 2D platinum ditelluride layers grown directly onto silicon wafers for near-to-mid IR photodetection, demonstrating high photocurrents in the spectral range of 1-7 µm and outperforming stand-alone 2D PtTe2 layers. The observed superiority is attributed to excellent Schottky junction characteristics and optical absorbance competition between 2D PtTe2 layers and Si, with the potential for mechanically flexible IR photodetectors.

ACS APPLIED MATERIALS & INTERFACES (2021)

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Article Nanoscience & Nanotechnology

High-Performance MoS2 Photodetectors Prepared Using a Patterned Gallium Nitride Substrate

Xinke Liu et al.

Summary: Strain-adjusting the band gap of MoS2 using patterned substrates to enhance the photoelectric performance of MoS2 is a research hotspot. Transferring a continuous multilayer MoS2 film to a patterned gallium nitride substrate (PGS) for photodetector fabrication showed improved photoresponse. This research provides guidance in improving the band gap of MoS2 and enhancing the performance of MoS2 photodetectors.

ACS APPLIED MATERIALS & INTERFACES (2021)

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Article Nanoscience & Nanotechnology

Interfacial Gated Graphene Photodetector with Broadband Response

Zhongzheng Huang et al.

Summary: The study showed that graphene/HfO2/Si photodetector has a stronger interfacial gating effect compared to graphene/SiO2/Si. The high efficiency was attributed to the higher interface state density at the HfO2/Si interface and the higher dielectric constant of the HfO2 layer. By utilizing the interfacial gating mechanism, fast response, high photoresponsivity, and ultrabroadband photodetection were achieved simultaneously, offering potential for electronic and optoelectronic applications.

ACS APPLIED MATERIALS & INTERFACES (2021)

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Article Nanoscience & Nanotechnology

Mid-Infrared Photodetection of Type-II Dirac Semimetal 1T-PtTe2 Grown by Molecular Beam Epitaxy

Tianyao Wei et al.

Summary: The researchers successfully grew high-quality and large-scale 1T-PtTe2 thin films using molecular beam epitaxy, demonstrating high photoresponse and sensitivity in the atmosphere. These findings suggest that PtTe2 could be an advanced photodetection material for polarization angle-sensitive detection, infrared imaging, and photodetection across the visible to mid-infrared range.

ACS APPLIED MATERIALS & INTERFACES (2021)

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Article Chemistry, Multidisciplinary

Long-Wave Infrared Photodetectors Based on 2D Platinum Diselenide atop Optical Cavity Substrates

Nima Sefidmooye Azar et al.

Summary: This study demonstrates long-wave infrared (LWIR) photodetectors based on multilayer PtSe2, which show high responsivities and fast response characteristics at LWIR wavelengths. The design of an optical cavity substrate enhances the light-matter interaction in 2D materials, improving their photodetection performance in the LWIR spectral region.

ACS NANO (2021)

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Review Chemistry, Multidisciplinary

Recent Progress of Methods to Enhance Photovoltaic Effect for Self-Powered Heterojunction Photodetectors and Their Applications in Inorganic Low-Dimensional Structures

Xin Hu et al.

Summary: Self-powered photodetectors, an important class of photoelectronic devices, have attracted worldwide attention due to their crucial role in both basic scientific research and commercial applications. The study of heterojunction devices can provide valuable insights and new possibilities for the future of self-powered photodetectors.

ADVANCED FUNCTIONAL MATERIALS (2021)

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Review Chemistry, Multidisciplinary

Van der Waals Integration Based on Two-Dimensional Materials for High-Performance Infrared Photodetectors

Haoyun Wang et al.

Summary: This review presents recent progress in vdW integration-based infrared photodetectors, including working mechanisms and advantages of different structures, 2D/nD vdW integration, band engineering, and device performance.

ADVANCED FUNCTIONAL MATERIALS (2021)

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Article Physics, Multidisciplinary

Electronic structure modification in two-dimensional pentagonal PdS2 by external strain

Mridu Sharma et al.

Summary: In the absence of external strain, 2D pentagonal PdS2 materials are indirect band gap semiconductors with a band gap decreasing as the number of stacking monolayers increases. External uniaxial and biaxial strains significantly modify the contributions of sulfur and palladium atom orbitals to the conduction and valence band edges, thereby altering the electronic structures of the materials. This strain tunability could be beneficial for electro-mechanical applications of 2D pentagonal PdS2 materials.

CANADIAN JOURNAL OF PHYSICS (2021)

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Article Chemistry, Physical

Tetrahex carbides: Two-dimensional group-IV materials for nanoelectronics and photocatalytic water splitting

Mehmet Emin Kilic et al.

Summary: The study introduces a series of novel two-dimensional group-IV carbides with strong anisotropic mechanical, electronic, and optical properties, showing negative Poisson's ratio and high ideal strength. Alloying allows tuning of band gaps, band edges, and carrier mobility, providing a new direction for the development of 2D nanomaterials.

CARBON (2021)

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Article Chemistry, Physical

Pd4S3Se3, Pd4S3Te3, and Pd4Se3Te3: Candidate Two-Dimensional Janus Materials for Photocatalytic Water Splitting

Yi Luo et al.

Summary: The anisotropic Janus materials Pd4S3Se3, Pd4S3Te3, and Pd4Se3Te3 exhibit stability, high carrier mobilities, and efficient photocatalytic water splitting capabilities. Their large intrinsic electric fields facilitate carrier migration, leading to enhanced carrier utilization and solar-to-hydrogen efficiency. These materials also show potential for catalyzing hydrogen and oxygen evolution reactions in various applications including electronics, optoelectronics, and photocatalytic water splitting.

CHEMISTRY OF MATERIALS (2021)

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Article Chemistry, Multidisciplinary

Dramatic Reduction of Contact Resistance via Ultrathin LiF in Two-Dimensional MoS2 Field Effect Transistors

Hyunmin Cho et al.

Summary: In addressing the high contact resistance in 2D devices, the use of thermal-evaporated ultrathin LiF between channel and source/drain metal has shown promising results in reducing RC values in MoS2 FETs. By utilizing the 4-bar FET method, lower RC values can be achieved, while transparent conducting oxide contact enables transparent MoS2 FETs to be realized.

NANO LETTERS (2021)

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Article Engineering, Electrical & Electronic

Enhancing the device performance of SiNP array/PtTe2 heterojunction photodetector by the light trapping effect

Xiao-Wei Tong et al.

Summary: This study demonstrates the fabrication of a highly sensitive photodetector based on Si nano-pillar/PtTe2 heterojunction, which exhibits remarkable photoelectric abilities across a wide range of illumination. The device shows impressive responsivity, detectivity, and external quantum efficiency, with a fast response speed. The results suggest potential applications for future high-performance optoelectronic devices using two-dimensional materials.

SENSORS AND ACTUATORS A-PHYSICAL (2021)

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Article Materials Science, Multidisciplinary

Narrowing Bandgap of HfS2 by Te Substitution for Short-Wavelength Infrared Photodetection

Jiafu Ye et al.

Summary: This study successfully engineered the bandgap of HfS2 by introducing a tellurium (Te) replacement strategy, expanding the response spectrum from visible light to short-wavelength infrared. This provides a new route for the development of infrared photodetectors.

ADVANCED OPTICAL MATERIALS (2021)

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MoO3-MoS2 vertical heterostructures synthesized via one-step CVD process for optoelectronics

Yuxi Guo et al.

Summary: The 2D vertical heterostructures of MoO3-MoS2 were successfully synthesized via chemical vapor deposition, demonstrating excellent performance in phototransistor devices. This study provides a new approach to simplify the fabrication process of MoO3-MoS2 vertical heterostructures for electronic and optoelectronic applications.

2D MATERIALS (2021)

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Review Nanoscience & Nanotechnology

Graphene in 2D/3D Heterostructure Diodes for High Performance Electronics and Optoelectronics

Zhenxing Wang et al.

Summary: The manuscript reviews diodes made of heterostructures of the 2D material graphene and conventional 3D materials, highlighting their applications in high frequency electronics and optoelectronics. It discusses the advantages of metal-insulator-graphene diodes over conventional metal-insulator-metal diodes, and the potential for graphene-based diodes to outperform traditional photodetectors. However, tailored adjustments are needed for 2D/3D diodes based on specific application requirements.

ADVANCED ELECTRONIC MATERIALS (2021)

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Article Nanoscience & Nanotechnology

Gate-Tunable Photodiodes Based on Mixed-Dimensional Te/MoTe2 Van der Waals Heterojunctions

Dongyang Zhao et al.

Summary: The mixed-dimensional van der Waals heterostructure photodiode made up of a 1D tellurium nanowire and a 2D molybdenum ditelluride flake demonstrates forward and backward rectifying characteristics, broad spectral response, ultrahigh external quantum efficiency, and controllable response time. These heterojunctions combining the advantages of 1D and 2D semiconductors will promote the development of next-generation electronics and optoelectronics.

ADVANCED ELECTRONIC MATERIALS (2021)

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Article Chemistry, Multidisciplinary

Highly Sensitive, Ultrafast, and Broadband Photo-Detecting Field-Effect Transistor with Transition-Metal Dichalcogenide van der Waals Heterostructures of MoTe2 and PdSe2

Amir Muhammad Afzal et al.

Summary: A novel vdWH FET composed of MoTe2 and PdSe2 has been studied for highly sensitive photodetection performance in the visible and near-infrared region, showing high rectification ratio, photoresponsivity, detectivity, and external quantum efficiency. The device exhibits rapid rise and decay times under incident light due to inter-TMD charge transfer transition, representing an outcome one order of magnitude faster than current literature values. These TMD-based vdWH FETs would improve photo-gating characteristics and provide a platform for highly sensitive photodetectors in the broad VNIR region.

ADVANCED SCIENCE (2021)

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Article Engineering, Electrical & Electronic

Anomalous resistive switching in memristors based on two-dimensional palladium diselenide using heterophase grain boundaries

Yesheng Li et al.

Summary: Memristors based on pentagonal palladium diselenide demonstrate anomalous resistive switching behavior with two interchangeable reset modes, showing good switching performance and stability.

NATURE ELECTRONICS (2021)

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Article Materials Science, Multidisciplinary

Large-area uniform few-layer PtS2: Synthesis, structure and physical properties

J. Lu et al.

Summary: The research focuses on the relatively unexplored group 10 TMDs, with PtS2 as a newly developed two-dimensional material with excellent properties for electronic and optoelectronic applications. Experimental and theoretical investigations were conducted on the synthesis, structure, and physical properties of few-layer PtS2. The results demonstrate the high quality and uniformity of the synthesized PtS2 samples, showing potential for advanced optoelectronic devices.

MATERIALS TODAY PHYSICS (2021)

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Article Chemistry, Multidisciplinary

Liquid-Metal-Assisted Growth of Vertical GaSe/MoS2 p-n Heterojunctions for Sensitive Self-Driven Photodetectors

Zixing Zou et al.

Summary: Controlled growth of vertical GaSe/MoS2 p-n heterojunctions was achieved via liquid gallium-assisted chemical vapor deposition method, showing prominent photovoltaic effects with high responsivity and fast response speed upon light illumination. This strategy provides an effective method for controllable synthesis of vdW heterostructures in high-performance optoelectronic device applications.

ACS NANO (2021)

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Article Chemistry, Multidisciplinary

Strong Interlayer Transition in Few-Layer InSe/PdSe2 van der Waals Heterostructure for Near-Infrared Photodetection

Waqas Ahmad et al.

Summary: This study demonstrates a highly sensitive type-II InSe/PdSe2 van der Waals heterostructure for NIR photodetection. The strong interlayer transition between InSe and PdSe2 is predicted and confirmed, leading to promising results in terms of photoresponsivity, detectivity, and external quantum efficiency. Construction of vdWs heterostructures with strong interlayer transition shows great potential for infrared photodetection and high-performance optoelectronic devices.

ADVANCED FUNCTIONAL MATERIALS (2021)

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Article Chemistry, Multidisciplinary

Planar-Coordination PdSe2 Nanosheets as Highly Active Electrocatalyst for Hydrogen Evolution Reaction

Zhiping Lin et al.

Summary: Traditional 2D materials such as Mo and W only show activity at the edge position for hydrogen evolution reaction, while PdSe2, with reduced spatial polyhedron coordination to planar polygon coordination, has both Pd and Se atoms as active sites with improved activity for HER.

ADVANCED FUNCTIONAL MATERIALS (2021)

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Article Chemistry, Multidisciplinary

Fast Photothermoelectric Response in CVD-Grown PdSe2 Photodetectors with In-Plane Anisotropy

Gang Li et al.

Summary: The study shows a photothermoelectric effect in PdSe2-based photodetectors, with unique photoresponse from an electron temperature gradient. The PdSe2 photodetector exhibits high performance in terms of ultrafast response speed, high air-stability, broadband spectrum photodetection, reasonable responsivity, and anisotropic optical response. This research opens up a new pathway for developing high-performance photodetectors based on PdSe2 layered materials.

ADVANCED FUNCTIONAL MATERIALS (2021)

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Article Chemistry, Multidisciplinary

Coexistence of Negative and Positive Photoconductivity in Few-Layer PtSe2 Field-Effect Transistors

Alessandro Grillo et al.

Summary: PtSe2 field-effect transistors exhibit p-type electrical conductivity sensitive to temperature and environmental pressure, with positive and negative photoconductivity coexisting under white light. Physisorbed oxygen molecules on the PtSe2 surface act as acceptors, affecting carrier concentration and optical properties through charge transfer mechanisms.

ADVANCED FUNCTIONAL MATERIALS (2021)

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Article Chemistry, Multidisciplinary

Junction Field-Effect Transistors Based on PdSe2/MoS2 Heterostructures for Photodetectors Showing High Responsivity and Detectivity

Haoyun Wang et al.

Summary: The novel junction field-effect transistor (JFET) photodetector achieved high responsivity and detectivity through dual-gate modulation, attributing its high performance to effective suppression of dark current and enhancement of photocurrent via modulation of the depletion region.

ADVANCED FUNCTIONAL MATERIALS (2021)

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Article Physics, Applied

Differentiation of ultraviolet/visible photons from near infrared photons by MoS2/GaN/Si-based photodetector

Deependra Kumar Singh et al.

Summary: A new type of broadband photodetector based on MoS2/GaN/Si heterojunction is reported, which exhibits wavelength selectivity through photocurrent polarity inversion and high spectral response in a broad range of wavelengths. The device shows potential for futuristic photonic applications without the need for filters.

APPLIED PHYSICS LETTERS (2021)

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Article Engineering, Electrical & Electronic

Optoelectronic performance characterization of MoS2 photodetectors for low frequency sensing applications

Seungjun Ki et al.

Summary: This research demonstrates that MoS2 photodetectors outperform CdS photodetectors, with performance significantly influenced by the thickness of the MoS2 photoactive layer. An optimized thickness range of 8-30 nm is identified, and the photoresponse characteristics at different wavelengths are also optimized.

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B (2021)

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Article Engineering, Environmental

Designing of 0D/2D mixed-dimensional van der waals heterojunction over ultrathin g-C3N4 for high-performance flexible self-powered photodetector

Ye Zhang et al.

Summary: Mixed-dimensional van der Waals heterojunctions show excellent photoelectric conversion capability, with the successful construction of a type II van der Waals heterojunction between gC3N4 and Bi demonstrating high photocurrent and responsivity in self-powered PEC-type photodetectors. Furthermore, the g-C3N4@Bi-based PD exhibits outstanding long-term stability and potential for practical applications.

CHEMICAL ENGINEERING JOURNAL (2021)

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Article Chemistry, Physical

Broadband photodetectors based on layered 1D GaTe nanowires and 2D GaTe nanosheets

Li-Chia Tien et al.

Summary: The study investigated the photoconductivity properties and photodetection mechanism of GaTe nanowires and nanosheets, demonstrating that 1D PDs outperformed 2D PDs in terms of broadband spectral responses. The higher carrier mobility of nanowire PDs led to improved responsivity and sensitivity.

JOURNAL OF ALLOYS AND COMPOUNDS (2021)

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Article Chemistry, Physical

Dual-band unipolar barrier infrared photodetector based on InGaAsSb bulk and type-II InAs/GaSb superlattice absorbers

Vivek Mohan More et al.

Summary: This study reported the material and device characterization of a dual-band infrared photo-detector with InGaAsSb and T2SL absorbers, showing different dark current sources and performance characteristics at different temperatures. Additionally, the detector demonstrated dual-band operation in the short-/mid-wavelength infrared ranges.

JOURNAL OF ALLOYS AND COMPOUNDS (2021)

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Article Engineering, Electrical & Electronic

Black Phosphorus/Molybdenum Diselenide Heterojunction-Based Photodetector

Abdelkader Abderrahmane et al.

Summary: The study reports the electrical and optoelectronic performance of 2D MoSe2 and its heterojunction with BP, showing improved characteristics for the BP/MoSe2 heterojunction which can be utilized as a self-powered photodetector.

JOURNAL OF ELECTRONIC MATERIALS (2021)

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Review Engineering, Electrical & Electronic

Introduction, production, characterization and applications of defects in graphene

Waqas Ahmad et al.

Summary: The successful preparation of graphene has revolutionized research in various fields due to its unique properties. This review summarizes recent studies on defects in graphene, discussing the types of defects, intentional production methods, effects on graphene properties, and applications of defective graphene. The comprehensive study provides valuable insights for future research in graphene applications.

JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS (2021)

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Article Nanoscience & Nanotechnology

Broadband photodetector based on ReS2/graphene/WSe2 heterostructure

Zengda Wang et al.

Summary: A novel ReS2/graphene/WSe2 heterostructure prepared by dry transfer demonstrates air-stable and high-performance photodetection, with specific detectivities up to 10(10) Jones and response time on the order of a millisecond. The heterostructure also exhibits polarization-sensitive photodetection and broad photoresponse from visible to infrared range, achieving a high photoresponsivity of 1.02 A W-1.

NANOTECHNOLOGY (2021)

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Article Optics

Mid-infrared semimetal polarization detectors with configurable polarity transition

Jingxuan Wei et al.

Summary: A nanoantenna-mediated semimetal photodetector, capable of configurable polarity transition and covering a wide range of polarization ratios from positive to negative values, has been reported. This device breaks the conventional relationship between polarization ratio (PR) and diattenuation, allowing for PR values to approach infinity at the polarity-transition point.

NATURE PHOTONICS (2021)

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Review Chemistry, Inorganic & Nuclear

Navigating recent advances in monoelemental materials (Xenes)-fundamental to biomedical applications

Karim Khan et al.

Summary: The emerging two-dimensional materials Xenes have shown potential in various technological fields and fundamental science, showcasing outstanding properties for biomedical applications. This review categorizes and summarizes the properties of 2D-Xenes, highlighting their synthetic methods and biomedical applications in the end.

PROGRESS IN SOLID STATE CHEMISTRY (2021)

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Article Chemistry, Physical

Patterning of type-II Dirac semimetal PtTe2 for optimized interface of tellurene optoelectronic device

Duc Anh Nguyen et al.

Summary: Laser-driven synthesis of PtTe2 from Pt-deposited 2D tellurium (Te) optimized the interface of 2D Te optoelectronic device, transforming the electrical properties from p-type semiconductor to metallic. This leads to greatly enhanced carrier mobility and photoresponsivity in the 2D Te devices, with high responsivity and detectivity achieved.

NANO ENERGY (2021)

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Article Materials Science, Multidisciplinary

Electrically adjusted deep-ultraviolet/near-infrared single-band/dual-band imaging photodetectors based on Cs3Cu2I5/PdTe2/Ge multiheterostructures

Yi Liang et al.

Summary: The research team has successfully implemented an electrically adjustable single-band/dual-band photodetector, which can switch between different wavelength ranges and has excellent responsivity. This innovation opens up new possibilities in designing high-performance photodetectors.

JOURNAL OF MATERIALS CHEMISTRY C (2021)

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Article Chemistry, Multidisciplinary

A novel MnO-CrN nanocomposite based non-enzymatic hydrogen peroxide sensor

Ayesha Khan Tareen et al.

Summary: A MnO-CrN composite was synthesized via ammonolysis of nitride precursors and exhibited excellent electrochemical sensing performance towards H2O2, with a wide linear response range, low detection limit, and short response time.

RSC ADVANCES (2021)

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Article Engineering, Electrical & Electronic

Unipolar barrier photodetectors based on van der Waals heterostructures

Yunfeng Chen et al.

Summary: Band-engineered van der Waals heterostructures are able to construct high room-temperature detectivity detectors for visible light and blackbody infrared light by blocking dark current without suppressing photocurrent. Utilizing two-dimensional materials with self-passivated surfaces and tunable band structures, unipolar barriers can be designed to avoid lattice mismatch and interface defects, achieving low dark current and high detectivity in photodetectors.

NATURE ELECTRONICS (2021)

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Review Chemistry, Multidisciplinary

Interface chemistry of two-dimensional heterostructures - fundamentals to applications

Sharafadeen Gbadamasi et al.

Summary: This review discusses the recent progress in the field of two-dimensional heterostructures (2D HSs), focusing on the fundamentals and chemistry of heterointerfaces based on van der Waals and covalent interactions. It also addresses challenges in scalable synthesis and introduces characterization techniques for revealing the heterointerface formation, chemistry, and nature. Additionally, it highlights the role of 2D HSs in various emerging applications such as high-power batteries, bifunctional catalysts, electronics, and sensors.

CHEMICAL SOCIETY REVIEWS (2021)

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Article Materials Science, Multidisciplinary

Fast and high photoresponsivity gallium telluride/hafnium selenide van der Waals heterostructure photodiode

Amir Muhammad Afzal et al.

Summary: In this study, a gallium telluride/hafnium selenide (GaTe/HfSe2) vdW heterostructure with excellent ohmic contacts was investigated, showing high gate-modulated rectification ratio and superior photoresponsivity compared to various reported vdW heterostructures. These TMD-based heterostructure devices have the potential to improve energy harvesting needs and enable multifunctional logic operations.

JOURNAL OF MATERIALS CHEMISTRY C (2021)

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Article Chemistry, Multidisciplinary

Detection of wavelength in the range from ultraviolet to near infrared light using two parallel PtSe2/thin Si Schottky junctions

Wen-Hua Yang et al.

Summary: A new wavelength sensor with the capability to accurately distinguish wavelengths in the UV-NIR range has been reported in this study. The sensor demonstrates low error rates and high accuracy, with extensive analysis conducted to reveal the factors influencing its performance.

MATERIALS HORIZONS (2021)

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Article Materials Science, Multidisciplinary

Controllable growth of type-II Dirac semimetal PtTe2 atomic layer on Au substrate for sensitive room temperature terahertz photodetection

Yang Yang et al.

Summary: This study successfully synthesized highly crystalline 2D PtTe2 crystals with controllable morphology and thickness via chemical vapor deposition (CVD) growth on Au substrate. The PtTe2 crystals grown on solid and molten Au substrates demonstrated anisotropic and isotropic growth modes, respectively. The metal-PtTe2-metal structural device exhibited wide-band terahertz (THz) photodetection capabilities with high responsivity, fast response rate, and high-quality imaging ability at room temperature.

INFOMAT (2021)

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Article Chemistry, Multidisciplinary

Construction of PtSe2/Ge heterostructure-based short-wavelength infrared photodetector array for image sensing and optical communication applications

Yu Lu et al.

Summary: The research presents the construction of a multilayered PtSe2/Ge heterostructure-based photodetector array with self-driven ability and fast response speed in the SWIR spectrum region. The photodetector exhibits outstanding photovoltaic effect, high photoresponse performance, and successful integration into optical communication systems.

NANOSCALE (2021)

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Article Materials Science, Multidisciplinary

Switching photodiodes based on (2D/3D) PdSe2/Si heterojunctions with a broadband spectral response

Sikandar Aftab et al.

Summary: Using mechanical exfoliation technique, we developed high-performance switching photodiodes based on mix-dimensional 2D palladium diselenide and three-dimensional silicon heterojunctions, demonstrating excellent rectifying behavior and self-driven photoresponses.

JOURNAL OF MATERIALS CHEMISTRY C (2021)

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Review Chemistry, Multidisciplinary

Evolution of low-dimensional material-based field-effect transistors

Waqas Ahmad et al.

Summary: This review discusses the significance and development of field-effect transistors (FETs) in the electronics industry, emphasizing the role of low-dimensional materials in FETs and proposing potential solutions to current issues. It provides guidance for the future development of high-performance FETs based on low-dimensional materials.

NANOSCALE (2021)

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Article Chemistry, Physical

Gate tunable self-powered few-layer black phosphorus broadband photodetector

Xiaofei Guo et al.

Summary: A novel broadband photodetector device based on few-layer black phosphorus is theoretically proposed and demonstrated, utilizing the photogalvanic effect to generate photocurrent without the need for an external bias voltage. The self-powered and dark current suppressed device allows for control of the detection range from mid-infrared to far-infrared, showing high polarization sensitivity and anisotropic photoresponse. The numerical findings provide a feasible way for the novel application of few-layer black phosphorus in broadband photodetectors.

PHYSICAL CHEMISTRY CHEMICAL PHYSICS (2021)

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Review Materials Science, Multidisciplinary

Solution-based bottom-up synthesis of group VI transition metal dichalcogenides and their applications

Aine Coogan et al.

Summary: Research interest in transition metal dichalcogenide (TMD) nanostructures has increased significantly in recent years, driven by their exceptional properties and potential applications. The most common production methods, top-down techniques, have drawbacks such as poor controllability and high cost, leading to a growing interest in bottom-up synthesis methods. Solution-based bottom-up synthesis of TMDs offers solutions to these issues and holds promise for various applications in the future.

MATERIALS ADVANCES (2021)

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Article Chemistry, Multidisciplinary

A Noble Metal Dichalcogenide for High-Performance Field-Effect Transistors and Broadband Photodetectors

Zhen Wang et al.

ADVANCED FUNCTIONAL MATERIALS (2020)

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Article Chemistry, Multidisciplinary

PdTe2 Transition-Metal Dichalcogenide: Chemical Reactivity, Thermal Stability, and Device Implementation

Gianluca D'Olimpio et al.

ADVANCED FUNCTIONAL MATERIALS (2020)

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Article Chemistry, Multidisciplinary

Interlayer Transition in a vdW Heterostructure toward Ultrahigh Detectivity Shortwave Infrared Photodetectors

Tailei Qi et al.

ADVANCED FUNCTIONAL MATERIALS (2020)

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Article Nanoscience & Nanotechnology

Wafer-Scale Growth of 2D PtTe2 with Layer Orientation Tunable High Electrical Conductivity and Superior Hydrophobicity

Mengjing Wang et al.

ACS APPLIED MATERIALS & INTERFACES (2020)

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Article Nanoscience & Nanotechnology

Thermal Localization Enhanced Fast Photothermoelectric Response in a Quasi-One-Dimensional Flexible NbS3 Photodetector

Weidong Wu et al.

ACS APPLIED MATERIALS & INTERFACES (2020)

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Article Nanoscience & Nanotechnology

Thickness-Independent Semiconducting-to-Metallic Conversion in Wafer-Scale Two-Dimensional PtSe2 Layers by Plasma-Driven Chalcogen Defect Engineering

Mashiyat Sumaiya Shawkat et al.

ACS APPLIED MATERIALS & INTERFACES (2020)

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Article Chemistry, Multidisciplinary

Atomically Precise PdSe2 Pentagonal Nanoribbons

Giang D. Nguyen et al.

ACS NANO (2020)

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Review Chemistry, Multidisciplinary

Surface Plasmonic-Assisted Photocatalysis and Optoelectronic Devices with Noble Metal Nanocrystals: Design, Synthesis, and Applications

Amir Zada et al.

ADVANCED FUNCTIONAL MATERIALS (2020)

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Article Chemistry, Multidisciplinary

Ultrahigh Responsivity Photodetectors of 2D Covalent Organic Frameworks Integrated on Graphene

Yifeng Xiong et al.

ADVANCED MATERIALS (2020)

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Review Chemistry, Multidisciplinary

Two-Dimensional Noble-Metal Chalcogenides and Phosphochalcogenides

Roman Kempt et al.

ANGEWANDTE CHEMIE-INTERNATIONAL EDITION (2020)

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Article Chemistry, Physical

Study of Electrophotophysical Characteristics of IR Photodetectors Based on PbS Colloidal Quantum Dots

S. B. Brichkin et al.

HIGH ENERGY CHEMISTRY (2020)

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Article Nanoscience & Nanotechnology

An ultrathin MoSe2 photodetector with near-perfect absorption

Wen Du et al.

NANOTECHNOLOGY (2020)

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Article Optics

Ranging and light field imaging with transparent photodetectors

Miao-Bin Lien et al.

NATURE PHOTONICS (2020)

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Article Physics, Multidisciplinary

Dimensionality-Mediated Semimetal-Semiconductor Transition in Ultrathin PtTe2 Films

Meng-Kai Lin et al.

PHYSICAL REVIEW LETTERS (2020)

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Article Nanoscience & Nanotechnology

High-Performance p-BP/n-PdSe2 Near-Infrared Photodiodes with a Fast and Gate-Tunable Photoresponse

Amir Muhammad Afzal et al.

ACS APPLIED MATERIALS & INTERFACES (2020)

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Article Chemistry, Multidisciplinary

Performance Improvement by Ozone Treatment of 2D PdSe2

Qijie Liang et al.

ACS NANO (2020)

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Article Chemistry, Multidisciplinary

High Spin Hall Conductivity in Large-Area Type-II Dirac Semimetal PtTe2

Hongjun Xu et al.

ADVANCED MATERIALS (2020)

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Article Chemistry, Multidisciplinary

Ultrabroadband Photodetectors up to 10.6 μm Based on 2D Fe3O4 Nanosheets

Chujun Yin et al.

ADVANCED MATERIALS (2020)

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Article Physics, Applied

High-speed infrared two-dimensional platinum diselenide photodetectors

Yi Wang et al.

APPLIED PHYSICS LETTERS (2020)

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Article Nanoscience & Nanotechnology

2D Layered Materials for Memristive and Neuromorphic Applications

Chen-Yu Wang et al.

ADVANCED ELECTRONIC MATERIALS (2020)

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Article Chemistry, Multidisciplinary

Sensitive Terahertz Detection and Imaging Driven by the Photothermoelectric Effect in Ultrashort-Channel Black Phosphorus Devices

Wanlong Guo et al.

ADVANCED SCIENCE (2020)

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Article Chemistry, Physical

Photogenerated-Carrier Separation and Transfer in Two-Dimensional Janus Transition Metal Dichalcogenides and Graphene van der Waals Sandwich Heterojunction Photovoltaic Cells

Xiaofeng Liu et al.

JOURNAL OF PHYSICAL CHEMISTRY LETTERS (2020)

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Article Materials Science, Multidisciplinary

Spectrally Selective and Highly Sensitive UV Photodetection with UV-A,C Band Specific Polarity Switching in Silver Plasmonic Nanoparticle Enhanced Gallium Oxide Thin-Film

Kanika Arora et al.

ADVANCED OPTICAL MATERIALS (2020)

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Article Materials Science, Multidisciplinary

Photocurrent response of type-II Dirac semimetal PtTe2

Jiawei Lai et al.

2D MATERIALS (2020)

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Article Chemistry, Physical

High-performance polarization-sensitive photodetector based on a few-layered PdSe2 nanosheet

Jiahong Zhong et al.

NANO RESEARCH (2020)

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Article Nanoscience & Nanotechnology

Atomic reconstruction in twisted bilayers of transition metal dichalcogenides

Astrid Weston et al.

NATURE NANOTECHNOLOGY (2020)

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Article Chemistry, Multidisciplinary

Understanding and Mapping Sensitivity in MOS2 Field-Effect-Transistor-Based Sensors

Steven G. Noyce et al.

ACS NANO (2020)

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Article Chemistry, Physical

Prediction of a ternary two-dimensional pentagonal Zn2C2P2 monolayer for photocatalytic water splitting with high carriers mobility

Xiaobiao Liu et al.

APPLIED SURFACE SCIENCE (2020)

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Article Materials Science, Multidisciplinary

Spectroscopic thickness and quality metrics for PtSe2layers produced by top-down and bottom-up techniques

Beata M. Szydlowska et al.

2D MATERIALS (2020)

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Article Nanoscience & Nanotechnology

Quantum Hall effect of Weyl fermions in n-type semiconducting tellurene

Gang Qiu et al.

NATURE NANOTECHNOLOGY (2020)

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Article Nanoscience & Nanotechnology

Bound-States-in-Continuum Hybrid Integration of 2D Platinum Diselenide on Silicon Nitride for High-Speed Photodetectors

Yi Wang et al.

ACS PHOTONICS (2020)

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Article Chemistry, Multidisciplinary

Probing the Importance of Charge Balance and Noise Current in WSe2/WS2/MoS2van der Waals Heterojunction Phototransistors by Selective Electrostatic Doping

Hyun-Soo Ra et al.

ADVANCED SCIENCE (2020)

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Article Multidisciplinary Sciences

Anisotropic ultrasensitive PdTe2-based phototransistor for room-temperature long-wavelength detection

Cheng Guo et al.

SCIENCE ADVANCES (2020)

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Article Nanoscience & Nanotechnology

Direct Tellurization of Pt to Synthesize 2D PtTe2 for High-Performance Broadband Photodetectors and NIR Image Sensors

Xiao-Wei Tong et al.

ACS APPLIED MATERIALS & INTERFACES (2020)

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Article Chemistry, Physical

First-Principles Study of the Hexagonal T-Phase PdSe2 Monolayer and Its Application in Solar Cells

Mukesh Jakhar et al.

JOURNAL OF PHYSICAL CHEMISTRY C (2020)

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Article Chemistry, Physical

Optical properties of thickness-controlled PtSe2 thin films studied via spectroscopic ellipsometry

Junbo He et al.

PHYSICAL CHEMISTRY CHEMICAL PHYSICS (2020)

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Article Chemistry, Multidisciplinary

Large-area 2D PtTe2/silicon vertical-junction devices with ultrafast and high-sensitivity photodetection and photovoltaic enhancement by integrating water droplets

Mashiyat Sumaiya Shawkat et al.

NANOSCALE (2020)

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Article Physics, Applied

Isotropic conduction and negative photoconduction in ultrathin PtSe2 films

Francesca Urban et al.

APPLIED PHYSICS LETTERS (2020)

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Article Chemistry, Multidisciplinary

Van der Waals Epitaxial Growth of Mosaic-Like 2D Platinum Ditelluride Layers for Room-Temperature Mid-Infrared Photodetection up to 10.6 μm

Longhui Zeng et al.

ADVANCED MATERIALS (2020)

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Article Materials Science, Multidisciplinary

All MoS2based 2D/0D localized unipolar heterojunctions as flexible broadband (UV-vis-NIR) photodetectors

Venkatarao Selamneni et al.

JOURNAL OF MATERIALS CHEMISTRY C (2020)

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Article Chemistry, Multidisciplinary

Wafer-scale 2D PtTe2 layers for high-efficiency mechanically flexible electro-thermal smart window applications

Emmanuel Okogbue et al.

NANOSCALE (2020)

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Article Nanoscience & Nanotechnology

Large Third-Order Optical Kerr Nonlinearity in Nanometer-Thick PdSe2 2D Dichalcogenide Films: Implications for Nonlinear Photonic Devices

Linnan Jia et al.

ACS APPLIED NANO MATERIALS (2020)

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Article Materials Science, Multidisciplinary

Multifunctional and high-performance GeSe/PdSe2 heterostructure device with a fast photoresponse

Amir Muhammad Afzal et al.

JOURNAL OF MATERIALS CHEMISTRY C (2020)

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Review Chemistry, Multidisciplinary

Progress, Challenges, and Opportunities for 2D Material Based Photodetectors

Mingsheng Long et al.

ADVANCED FUNCTIONAL MATERIALS (2019)

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Article Chemistry, Physical

In-situ fabrication of PtSe2/GaN heterojunction for self-powered deep ultraviolet photodetector with ultrahigh current on/off ratio and detectivity

Ranran Zhuo et al.

NANO RESEARCH (2019)

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Review Chemistry, Physical

Memristive crossbar arrays for brain-inspired computing

Qiangfei Xia et al.

NATURE MATERIALS (2019)

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Article Materials Science, Multidisciplinary

Black Phosphorous/Indium Selenide Photoconductive Detector for Visible and Near-Infrared Light with High Sensitivity

Rui Cao et al.

ADVANCED OPTICAL MATERIALS (2019)

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Article Chemistry, Multidisciplinary

High-Performance, Room Temperature, Ultra-Broadband Photodetectors Based on Air-Stable PdSe2

Qijie Liang et al.

ADVANCED MATERIALS (2019)

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Review Chemistry, Multidisciplinary

2D Metal Chalcogenides for IR Photodetection

Fakun Wang et al.

SMALL (2019)

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Gate Tuning of High-Performance InSe-Based Photodetectors Using Graphene Electrodes

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Efficient Photoelectrochemical Hydrogen Generation Using Heterostructures of Si and Chemically Exfoliated Metallic MoS2

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Black Phosphorus Photodetector for Multispectral, High-Resolution Imaging

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Mechanisms of Photoconductivity in Atomically Thin MoS2

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Bismuth Telluride and Its Alloys as Materials for Thermoelectric Generation

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Broadband high photoresponse from pure monolayer graphene photodetector

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Photocatalytic Water Splitting: Recent Progress and Future Challenges

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Boron nitride substrates for high-quality graphene electronics

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High-Detectivity Polymer Photodetectors with Spectral Response from 300 nm to 1450 nm

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