期刊
JOURNAL OF PHYSICAL CHEMISTRY LETTERS
卷 7, 期 20, 页码 4059-4066出版社
AMER CHEMICAL SOC
DOI: 10.1021/acs.jpclett.6b01942
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资金
- National Science Foundation [ECCS-1609032]
- Air Force Office of Scientific Research [FA9550-16-1-0124]
- Div Of Electrical, Commun & Cyber Sys
- Directorate For Engineering [1609032] Funding Source: National Science Foundation
Charge-carrier injection into an emissive semiconductor thin film can result in electroluminescence and is generally achieved by using a multilayer device structure, which requires an electron-injection layer (EIL) between the cathode and the emissive layer and a hole-injection layer (HIL) between the anode and the emissive layer. The recent advancement of halide perovskite semiconductors opens up a new path to electroluminescent devices with a greatly simplified device structure. We report cesium lead tribromide light-emitting diodes (LEDs) without the aid of an EIL or HIL. These so-called single-layer LEDs have exhibited a sub-band gap turn-on voltage. The devices obtained a brightness of 591 197 cd m(-2) at 4.8 V, with an external quantum efficiency of 5.7% and a power efficiency of 14.1 lm W-1. Such an advancement demonstrates that very high efficiency of electron and hole injection can be obtained in perovskite LEDs even without using an EIL or HIL.
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