期刊
SCIENCE
卷 378, 期 6621, 页码 -出版社
AMER ASSOC ADVANCEMENT SCIENCE
DOI: 10.1126/science.abp8278
关键词
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资金
- National Science Foundation (NSF) [NSF ECCS-1915814]
- NSF Materials Research Science and Engineering Center at Northwestern University [NSF DMR-1720139]
- Defense Advanced Research Projects Agency (DARPA) Electronics Resurgence Initiative (ERI) Three Dimensional Monolithic System on a Chip (3DSoC)
- NSF [1640060]
- Stanford SystemX Alliance
This article briefly reviews the recent progress in materials, devices, and technologies related to carbon nanotube transistors, with emphasis on advancements from single-nanotube devices to implementations with aligned nanotubes and even nanotube thin films.
Semiconducting carbon nanotubes are robust molecules with nanometer-scale diameters that can be used in field-effect transistors, from larger thin-film implementation to devices that work in conjunction with silicon electronics, and can potentially be used as a platform for high-performance digital electronics as well as radio-frequency and sensing applications. Recent progress in the materials, devices, and technologies related to carbon nanotube transistors is briefly reviewed. Emphasis is placed on the most broadly impactful advancements that have evolved from single-nanotube devices to implementations with aligned nanotubes and even nanotube thin films. There are obstacles that remain to be addressed, including material synthesis and processing control, device structure design and transport considerations, and further integration demonstrations with improved reproducibility and reliability; however, the integration of more than 10,000 devices in single functional chips has already been realized.
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