期刊
JOURNAL OF PHYSICAL CHEMISTRY C
卷 120, 期 8, 页码 4251-4258出版社
AMER CHEMICAL SOC
DOI: 10.1021/acs.jpcc.5b11594
关键词
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资金
- National Research Foundation of Korea (NRF) - Korean government [NRF-2014R1A2A1A11053109]
- New & Renewable Energy of the Korea Institute of Energy Technology Evaluation and Planning (KETEP) grant - Korea Government and Ministry of Trade, Industry, and Energy [20123010010130]
- Korea Evaluation Institute of Industrial Technology (KEIT) [20123010010130] Funding Source: Korea Institute of Science & Technology Information (KISTI), National Science & Technology Information Service (NTIS)
The impacts of Ge alloying on crystal growth and device properties of kesterite-based CZTSSe thin film solar cells fabricated by chalcogenization of sputtered stacks in S/Se ambient were investigated. It was found that Ge-alloyed CZTSSe material improved the grain growth, compactness of film texture, and crystallinity of absorber layers as, a consequence of the device efficiencies were enhanced from similar to 3 to 6%. The investigations on optoelectronic characteristics of devices illustrated that the improvements in devices were mainly governed by decrease in diode ideality factor, suppression of crossover effect between white and dark J-V curves, and reduction of defect level in Ge-alloyed CZTSSe solar cell device. These results suggest the possibility to achieve a further improvement in the optoelectronic characteristics of the devices that could be accomplished by optimization of the technological processes with a fine-timing of the Ge content in the layers.
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