期刊
JOURNAL OF PHYSICAL CHEMISTRY C
卷 120, 期 10, 页码 5613-5618出版社
AMER CHEMICAL SOC
DOI: 10.1021/acs.jpcc.6b01062
关键词
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资金
- National Natural Science Foundation of China [51171126, 61575094]
- Program for New Century Excellent Talents in University [NCET-13-0409]
- High Performance Computing Center of Tianjin University, China
We perform an ab initio simulation on the structural and electronic properties of van der Waals monolayer arsenene/FeCl2 heterostructures. Spin splitting appears at the conduction band minimum of arsenene due to interfacial coupling between As p and Cl p, Fe d states in the spin-down channel. The maximum splitting energy is 123 meV in all stacking configurations. Moreover, the splitting energy can be tuned by a perpendicular electric field. At a field of 5 V/nm, the spin-splitting direction can be inversed, and the splitting energy is -66 meV. Additionally, the positive electric field makes the system turn from an Ohmic contact into a Schottky one, which realizes a continuous modulation on the barrier height. More importantly, the electric control of spin-splitting inversion can be converted into an electric potential difference in arsenene according to the anomalous Hall effect. The transformation from spin-manipulation information to electric signal is useful in spintronic devices.
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