期刊
ADVANCED MATERIALS
卷 27, 期 30, 页码 4454-4460出版社
WILEY-V C H VERLAG GMBH
DOI: 10.1002/adma.201502079
关键词
nanorod image sensors; photon-effect transistors; 3D vertical array pixels; ultrahigh-resolution image sensors; 3D nanoconfinement
The pixel size limit of existing digital image sensors is successfully overcome by using vertically aligned semiconducting nanorods as the 3D photosensing pixels. On this basis, an unprecedentedly high-resolution digital image sensor with a pixel size of 50 nm and a resolution of 90 nm is fabricated. The ultrahigh-resolution digital image sensor can heavily impact the field of visual information.
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