期刊
PROGRESS IN PHOTOVOLTAICS
卷 -, 期 -, 页码 -出版社
WILEY
DOI: 10.1002/pip.3658
关键词
BaSi2; ion implantation; solar cell
资金
- JSPS KAKENHI [19KK0104, JP21H04548]
- Science Grant Agency of the Ministry of Education, Science, Research and Sport of the Slovak Republic [VEGA 1/0532/19, VEGA 1/0529/20]
- [21J20404]
- [19J21372]
In this study, n-BaSi2 films were formed on p-Si substrates using ion implantation technique, and the solar-cell functionality of n-BaSi2/p-Si heterojunction was demonstrated under AM1.5 illumination. The results showed that the ion implantation damage could be recovered by postannealing, leading to high internal quantum efficiency.
We formed phosphorous(P)-ion-implanted n-BaSi2 films on p-Si(111) substrates and demonstrated solar-cell functionality of the n-BaSi2/p-Si heterojunction under AM1.5 illumination. The BaSi2 films were grown by molecular beam epitaxy, followed by implantation of P ions to the BaSi2 films using PF3 gas at an energy of 10 keV and a dose of 1 x 10(14) cm(-2). Subsequent postannealing was conducted at 500 degrees C in Ar for different durations (t = 30-480 s) to activate the P atoms. The diffusion coefficient for P atoms in BaSi2 was evaluated from the depth profiles of P atoms by secondary-ion mass spectrometry. The activation energies of lattice and grain boundary diffusion were found to be 1.1 +/- 0.6 and 2.5 +/- 0.6 eV, respectively. From the analysis of Raman and photoluminescence spectra, the ion implantation damage was recovered by the postannealing. For one treated sample with t = 120 s, the internal quantum efficiency reached 67% at a wavelength of 870 nm. This is the highest ever achieved for n-BaSi2/p-Si heterojunction solar cells. Ion implantation is thus applicable to BaSi2 films grown by any other method. This achievement thereby opens a new route for the formation of BaSi2 solar cells.
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