期刊
PROCEEDINGS OF THE IEEE
卷 111, 期 2, 页码 158-184出版社
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
DOI: 10.1109/JPROC.2023.3234607
关键词
Reliability; FeFETs; Hafnium oxide; Integrated circuit reliability; Nonvolatile memory; Random access memory; Ferroelectric materials; Ferroelectric FETs; reliability; endurance; retention; variability
This article reviews the relevant literature on the reliability of doped hafnium oxide (HfO2) based ferroelectric transistors (FeFETs), focusing on the reliability physics of ferroelectric capacitors and the key reliability metrics of FeFETs. The integrative approach connects seemingly unrelated reliability issues and suggests mitigation strategies at the device, circuit, or system level. The article concludes by proposing research opportunities for future development in this field.
Ferroelectric transistors (FeFETs) based on doped hafnium oxide (HfO2) have received much attention due to their technological potential in terms of scalability, high-speed, and low-power operation. Unfortunately, however, HfO2-FeFETs also suffer from persistent reliability challenges, specifically affecting retention, endurance, and variability. A deep understanding of the reliability physics of HfO2-FeFETs is an essential prerequisite for the successful commercialization of this promising technology. In this article, we review the literature about the relevant reliability aspects of HfO2-FeFETs. We initially focus on the reliability physics of ferroelectric capacitors, as a prelude to a comprehensive analysis of FeFET reliability. Then, we interpret key reliability metrics of the FeFET at the device level (i.e., retention, endurance, and variability) based on the physical mechanisms previously identified. Finally, we discuss the implications of device-level reliability metrics at both the circuit and system levels. Our integrative approach connects apparently unrelated reliability issues and suggests mitigation strategies at the device, circuit, or system level. We conclude this article by proposing a set of research opportunities to guide future development in this field.
作者
我是这篇论文的作者
点击您的名字以认领此论文并将其添加到您的个人资料中。
推荐
暂无数据