Tuning the Properties of Nanoceria by Applying Force: Stress-Induced Ostwald Ripening

The ionic conductivity and activity of a material, such as ceria, is central to its exploitation in applications such as fuel cells or catalysis. Grain boundaries (GB) influence profoundly the ionic conductivity and activity of a material. Accordingly, the ability to control GB concentrations is pivotal to these applications. Here, we show that Oswald ripening can be induced by applying uniaxial force. In particular, grain boundaries are purged to facilitate single nanocrystals from polycrystalline precursors. Our simulations thus predict mechanisms for strain tunable properties.