期刊
PHYSICAL REVIEW LETTERS
卷 130, 期 4, 页码 -出版社
AMER PHYSICAL SOC
DOI: 10.1103/PhysRevLett.130.046201
关键词
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By reducing the thickness of thin films of three-dimensional topological insulators, it is possible to create two-dimensional topological insulators. We have observed the first 2D TI state in epitaxial thin films of cadmium arsenide.
Two-dimensional topological insulators (2D TIs) are a highly desired quantum phase but few materials have demonstrated clear signatures of a 2D TI state. It has been predicted that 2D TIs can be created from thin films of three-dimensional TIs by reducing the film thickness until the surface states hybridize. Here, we employ this technique to report the first observation of a 2D TI state in epitaxial thin films of cadmium arsenide, a prototype Dirac semimetal in bulk form. Using magnetotransport measurements with electrostatic gating, we observe a Landau level spectrum and quantum Hall effect that are in excellent agreement with those of an ideal 2D TI. Specifically, we observe a crossing of the zeroth Landau levels at a critical magnetic field. We show that the film thickness can be used to tune the critical magnetic field. Moreover, a larger change in film thickness causes a transition from a 2D TI to a 2D trivial insulator, just as predicted by theory. The high degree of tunability available in epitaxial cadmium arsenide heterostructures can thus be used to fine-tune the 2D TI, which is essential for future topological devices.
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