Influence of the Position of Local Ta Doping in SiNx Resistive Random Access Memory

This article presents an analysis of the effect of the Ta-doping position on the performance of SiNx-based resistive random access memories by comparing the electrical properties and conduction mechanisms of the devices. The electrical test results show that when the doping position moves down in the resistive switching (RS) layer, the resistance window of the device increases during the resistive switch process. However, the consistency of the parameter distribution decreases. The conduction mechanism of all Ta-doped devices behaves as space charge limited current. According to the analysis of the RS model of the device, Ta in the RS layer connects and disconnects with the localized conductive filaments. The adjustment ability of the doping layer on the conductive channel and the reduction of the device stability when the doping position moves up are proposed. Proper Ta doping in the middle of the RS layer of the device allows the device to obtain a large resistance window with relatively stable characteristics.

Automated summary

This article analyzes the effect of Ta-doping position on the performance of SiNx-based resistive random access memories by comparing the electrical properties and conduction mechanisms of the devices. The test results show that as the doping position moves down in the resistive switching layer, the resistance window increases during the resistive switch process, but the consistency of parameter distribution decreases. The conduction mechanism of all Ta-doped devices behaves as space charge limited current. The analysis of the RS model suggests that Ta in the RS layer connects and disconnects with localized conductive filaments, and the doping layer's adjustment ability on the conductive channel affects device stability when the doping position moves up. Proper Ta doping in the middle of the RS layer allows the device to have a large resistance window with relatively stable characteristics.