Growth Conditions and Substrate Misorientation Angle Dependences of Silicon Incorporation in Chemical Vapor Deposition Diamond

The results of a study of the incorporation of silicon in diamond depending on the growth conditions of epitaxial layers in a chemical vapor deposition (CVD) reactor in a gas mixture of hydrogen, methane, and silane are presented. A detailed study of the effect of methane and silane flows, substrate temperature, gas mixture pressure, and substrate misorientation angle has been carried out. The influence of the surface misorientation angle on the formation of silicon-vacancy (SiV) centers in diamond has been studied. It has been found that the carbon content in the gas mixture has a significant effect on the incorporation of silicon into diamond. Studies of the CVD growth of silicon-doped diamond are carried out simultaneously with studies of the optical spectra of plasma emission in the reactor. The content of silicon in plasma is compared with content of silicon incorporated into diamond during CVD synthesis. The most efficient formation of SiV centers is observed for substrate misorientation angles from 2 degrees to 4 degrees.

Automated summary

The study explores the incorporation of silicon in diamond through the growth conditions of epitaxial layers in a CVD reactor using a gas mixture of hydrogen, methane, and silane. Factors such as methane and silane flows, substrate temperature, gas mixture pressure, and substrate misorientation angle were examined. The carbon content in the gas mixture was found to have a significant impact on the incorporation of silicon into diamond. The efficiency of SiV center formation was highest at substrate misorientation angles between 2 and 4 degrees.