Ni-doped hybrids of TiO2 and two-dimensional Ti3C2 MXene for enhanced photocatalytic performance

Transition metal ion doping is an effective strategy by which to enhance the photocatalytic activity of semiconductor materials. Herein, Ni-doped TiO2/Ti3C2 photocatalysts were designed and fabricated using a simple dipping method and their catalytic performance was verified via the degradation of rhodamine B (RhB). Ni doping induces the formation of a defect energy level in TiO2, which shortens the transition distance of photogenerated electrons. Ti3C2 acts as a hole acceptor, which is conducive to the transfer of photogenerated charge. The results show that the Ni-doped TiO2/Ti3C2 heterojunction structure exhibits the lowest photoluminescence peak intensity, the highest instantaneous current, and excellent photocatalytic performance compared to TiO2/ Ti3C2 and TiO2. At optimal Ni content, the removal efficiency of RhB is 90%, around 3.7 times higher than that of pure TiO2. This work details the preparation of an excellent Ni-doped heterojunction structure for enhanced photocatalytic performance, demonstrating an effective strategy by which to improve the charge separation ability.

Automated summary

Transition metal ion doping is an effective strategy to enhance the photocatalytic activity of semiconductor materials. In this study, Ni-doped TiO2/Ti3C2 photocatalysts were designed and fabricated, and their catalytic performance was verified through the degradation of Rhodamine B (RhB). The results showed that the Ni-doped TiO2/Ti3C2 heterojunction structure exhibited the lowest photoluminescence peak intensity, the highest instantaneous current, and excellent photocatalytic performance compared to TiO2/Ti3C2 and TiO2.