Ultrafast response solar-blind UV sensor based on ZnGa2O4 nanowire bridge arrays

In optoelectronic devices and deep UV photodetectors, there is an urgent need for solar-blind photodetectors with a fast response time. Spinel ZnGa2O4 is a wide-bandgap metal-oxide direct-gap semiconductor (4.4-5.2 eV, UV band for 100-280 nm) with outstanding optical and electrical properties, making it the best choice for solarblind photodetectors. In this work, the ZnGa2O4 lateral nanowire bridge arrays were speedily manufactured on an insulating SiO2/Si substrate with a simplified specific low-cost CVD process with Au arrays catalyst. A thin film of ZnGa2O4 nanowire bridge arrays was synthesized in 3 min, implying a high potential for the fast development of ZnGa2O4 nanowire bridge arrays and their application in the future solar-blind photodetectors. Furthermore, a solar-blind photodetector using MSM (Metal-Semiconductor-Metal) ZnGa2O4 bridge arrays with exceptional performance was developed here, with a rise time of similar to 0.067 s, an Idark of 0.041 nA, and a light-dark ratio 3.3 x 102. Meanwhile, the response time of the nanowire arrays photodetector was 10 times faster than that of the nanowire networks photodetector prepared by the same method. Our work provided inspiration for the manufacture of high-performance solar-blind photodetectors.

Automated summary

This study developed zinc gallium oxide nanowire bridge arrays through a simplified specific low-cost CVD process with Au arrays catalyst. The nanowire bridge arrays exhibited fast response time and exceptional performance, making them a promising candidate for solar-blind photodetectors.