4.5 Article

The effects of the dielectric screening, temperature, magnetic field, and the structure dimension on the diamagnetic susceptibility and the binding energy of a donor-impurity in quantum disk

期刊

PHYSICA B-CONDENSED MATTER
卷 646, 期 -, 页码 -

出版社

ELSEVIER
DOI: 10.1016/j.physb.2022.414371

关键词

QDisk; Binding energy; Diamagnetic susceptibility; Magnetic field; Temperature; Dielectric screening

向作者/读者索取更多资源

This study investigates the effects of dielectric screening, temperature, and magnetic field on the diamagnetic susceptibility and binding energy of donor impurities in GaAs quantum disks (QDisks). It also reports on the influence of position, hydrostatic pressure, temperature, and magnetic field on the dielectric screening function and diamagnetic coefficient. The results show that variations in QDisk dimensions, temperature, magnetic field, and pressure significantly affect the diamagnetic susceptibility and binding energy, as well as the diamagnetic coefficient and dielectric screening.
Through the present work, we investigated the dielectric screening, temperature and applied magnetic field on donor-impurity diamagnetic susceptibility and binding energy in quantum disk (QDisk) made out of GaAs. Moreover, the influence of the position, hydrostatic pressure, temperature, and magnetic field on the dielectric screening function and the diamagnetic coefficient are also reported. The calculations are performed within the effective-mass theory using variational approach considering an infinite potential barrier. Our results reveal that the variation of QDisk's dimension, temperature, magnetic field and pressure have a considerable impact on diamagnetic susceptibility and binding energy, diamagnetic coefficient (DC) and dielectric screening. It is found that the magnetic field increase the diamagnetic susceptibility and binding energy while the temperature and dielectric screening reduce the diamagnetic susceptibility and improve the binding energy. We hope that the present work exhibits a modest contribution for further theoretical research on GaAs-based nanostructures.

作者

我是这篇论文的作者
点击您的名字以认领此论文并将其添加到您的个人资料中。

评论

主要评分

4.5
评分不足

次要评分

新颖性
-
重要性
-
科学严谨性
-
评价这篇论文

推荐

暂无数据
暂无数据