期刊
PHYSICA B-CONDENSED MATTER
卷 651, 期 -, 页码 -出版社
ELSEVIER
DOI: 10.1016/j.physb.2022.414604
关键词
Boron carbide; Raman; High pressure; Structure
In their paper, Sahu et al. use an outdated model of the boron carbide structure and ignore numerous studies on its complex structure and effects on properties. The Raman spectra used as reference are not suitable or reliable. The claimed agreement between calculated and real Raman spectra is not convincing.
In their paper, Sahu et al. use an idealized and long outdated model of the boron carbide structure, that in reality is determined by high concentrations of intrinsic defects. Numerous studies enlightening the highly complex structure of this semiconductor and the effects on properties are ignored. The Raman spectra used for reference do not withstand the scrutiny for bulk Raman spectra of boron carbide or are hardly suitable because of insufficient resolution. The claimed agreement between their calculated Raman spectra and the real ones is not convincing in most cases.
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