The temperature-dependent dielectric properties of the Au/ZnO-PVA/n-Si structure

In this work, the temperature-dependent (80-360 K) dielectric properties of the Au/ZnO-PVA/n-Si structure was investigated employing capacitance-voltage (C-V) and conductance-voltage (G/ro-V) experiments at 1 MHz. The results indicate that all electrical and dielectric variables in these structures are forcefully dependent on tem-perature. Also, using the interlayer ZnO-PVA nanocomposite has caused changes to these parameters. Because of the presence of series resistance, the amount of C and G/ro increases as the temperature rises. The values of EF increase with temperature, whereas the values of barrier height decrease from 1.045 eV to 0.943 eV, and the value of alpha extract from phi B-T plot is obtained-3.5 x 10-4 eV/K that is approximately equal to the silicon temperature coefficient. The value of activation energy is obtained 0.04 eV which is a modest amount obtained from the conduction procedure's contribution to the boundary grains.

Automated summary

The temperature-dependent dielectric properties of the Au/ZnO-PVA/n-Si structure were studied using capacitance-voltage (C-V) and conductance-voltage (G/ro-V) experiments. The results showed that all electrical and dielectric variables in these structures strongly depend on temperature. The use of ZnO-PVA nanocomposite as an interlayer resulted in changes to these parameters. The presence of series resistance caused an increase in the values of capacitance and conductance as the temperature increased. The activation energy value obtained from the conduction procedure's contribution to the boundary grains was found to be 0.04 eV, indicating a moderate amount.