Tailoring the performance of GaN-based yellow light-emitting diodes

Efficient yellow InGaN light-emitting diodes (LEDs) have been a challenge for the researchers. To achieve yellow emission, high indium composition is necessary. However, high indium composition comes with its own chal-lenges. In our work, the performance of InGaN yellow light emitting diodes is improved by using quaternary (AlInGaN) quantum barriers and ternary (AlGaN) quantum barriers in the conventional InGaN/GaN LED. We show that employing AlGaN quantum barriers in the light-emitting diodes significantly increases the concen-tration of electrons as well as holes, resulting in a 47% increase in radiative recombination rate than the con-ventional yellow LED. Additionally, the efficiency droop is significantly reduced in our proposed LEDs.

Automated summary

Efficient yellow InGaN light-emitting diodes (LEDs) have been achieved by using quaternary (AlInGaN) and ternary (AlGaN) quantum barriers, resulting in a 47% increase in radiative recombination rate compared to conventional yellow LEDs. Moreover, the proposed LEDs also exhibit significantly reduced efficiency droop.