Tuning Electrical Transport Mechanism of Polyaniline Graphene Oxide Quantum Dots Nanocomposites for Potential Electronic Device Applications

In this report, we study the tuning of the electrical transport dimensionality of polyaniline-graphene oxide quantum dots nanocomposites (PANI-GOQD) for electronic device applications. We focused this study on the:microstructure and its correlations with electrical transport properties. X-ray diffraction and small-angle X-ray scattering analyses showed the effect that caused the addition of GOQD on the structural and microstructural properties of polyaniline. Confocal Raman spectroscopy revealed that the presence of GOQD leads to a notorious decrease of the polaron population of polyaniline. In relation to this experimental evidence; a significant increase in resistivity was oberved for PANI-GOQD nanocomposites with respect to pure polyaniline. Electrical transport showed a typical Arrhenius behavior at relatively high temperatures and a broad transition with a logarithmic dependence of the activation energy with temperature for the intermediate temperature regime. Additionally,, PANI-GOQD showed an increase in the hopping, transport dimensionality even in the case of low amounts of GOQD. The tuning of this dimensionality in these nanocomposites could be important for the development of novel organic electronic materials.