4.6 Article

Ultra-compact and broadband all-silicon TM-pass power splitter using subwavelength holey-structured metamaterial waveguides

期刊

OPTICS EXPRESS
卷 30, 期 25, 页码 44604-44616

出版社

Optica Publishing Group
DOI: 10.1364/OE.477109

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资金

  1. Scientific Research Foundation of the Graduate School of Southeast University
  2. Natural Science Foundation of Jiangsu Province
  3. National Natural Science Foundation of China
  4. [YBPY2134]
  5. [BK20211163]
  6. [11574046]
  7. [12004092]

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In this paper, an ultra-compact and broadband all-silicon TM-pass power splitter is experimentally demonstrated for the first time. The power splitter utilizes holey-structured waveguides to achieve wide stop-band for TE-polarized light, low loss transmission for TM-polarized light, and flattened TM dispersion, enabling broadband power splitting for TM polarization.
Power splitters with polarization management features are highly desired to construct high-density silicon photonic integrated circuits. However, few attempts have been made to design a single device that can act as both a power splitter and a TE- or TM-pass polarizer. In this paper, for the first time, we experimentally demonstrate an ultra-compact and broadband all-silicon TM-pass power splitter, where a triple-guide directional coupler (TGDC) composed of three parallel subwavelength holey-structured metamaterial waveguides (SHMWs) is located at central coupling region and three regular strip waveguides are connected at the input/output ports. Such a SHMW can enhance the reflection to realize a wide stop-band for the undesired TE polarized light, while achieving the low loss transmission for the TM polarized light. Besides, the TM dispersion can be significantly flattened by the designed SHMWs, leading to a broadband power splitting for TM polarization. Simulated results show that an ultra-compact device of 1.7 x 4 mu m2 in size is obtained with an insertion loss (IL) of 0.34 dB and an extinction ratio (ER) of 36 dB at 1550 nm, and its working bandwidth can be extended to similar to 240 nm by keeping IL < 0.9 dB and ER > 16 dB. The measurements of the fabricated devices show low IL (<1 dB) and high ER (>15 dB) over the measured wavelength range of 1460 to 1580 nm, which is consistent with the simulation results.

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