Sidewall geometric effect on the performance of AlGaN-based deep-ultraviolet light-emitting diodes

In this study, deep-ultraviolet light-emitting diodes (DUV LEDs) with different chip sidewall geometries (CSGs) are investigated. The structure had two types of chip sidewall designs that combined DUV LEDs with the same p-GaN thickness. By comparing the differences of the characteristics such as the external quantum efficiency droops, light output power, light extraction efficiency (LEE), and junction temperature of these DUV LEDs, the self-heated effect and light-tracing simulation results have been clearly demonstrated to explain the inclined sidewalls that provide more possibility pathway for photons escape to increase the LEE of LEDs; thus, the DUV LEDs with the CSG presented improved performance. These results demonstrate the potential of CSG for DUV LED applications.(c) 2022 Optica Publishing Group under the terms of the Optica Open Access Publishing Agreement

Automated summary

This study investigates deep-ultraviolet light-emitting diodes (DUV LEDs) with different chip sidewall geometries (CSGs). By comparing the characteristics of these LEDs, it is clearly demonstrated that inclined sidewalls provide more possible pathways for photons to increase the light extraction efficiency (LEE) of LEDs. Therefore, DUV LEDs with the CSGs exhibit improved performance.