Sub-nanosecond diode-pumped passively Q-switched Nd:LuAG ceramic microchip lasers

Diode-pumped continuous-wave and passively Q-switched Nd:LuAG ceramic microchip lasers at 1064 nm and 1053 nm have been demonstrated, for the first time to our knowledge. For the continuous-wave operation, the achieved maximum output powers of the two lasers reaches 1.62 W and 0.75 W, respectively. Using Cr:YAG crystal as saturable absorber, the two lasers can also been operated in passively Q-switched regimes with sub -nanosecond pulse durations of 489 ps and 556 ps, respectively. The maximum single pulse energy and pulse peak power for the 1064 nm and 1053 nm lasers are calculated to be about 22.25 mu J and 45.49 kW, as well as 12.74 mu J and 22.91 kW. All solid-state microchip lasers give the tremendous potential for high performance laser generation with sub-nanosecond short pulse duration, high single pulse energy and high pulse peak power.

Automated summary

For the first time, diode-pumped continuous-wave and passively Q-switched Nd:LuAG ceramic microchip lasers at 1064 nm and 1053 nm have been demonstrated. The continuous-wave operation achieved maximum output powers of 1.62 W and 0.75 W for the two lasers, respectively. Using a Cr:YAG crystal as a saturable absorber, the lasers can also operate in passively Q-switched regimes with sub-nanosecond pulse durations of 489 ps and 556 ps, respectively. The all solid-state microchip lasers show great potential for high performance laser generation with sub-nanosecond short pulse duration, high single pulse energy, and high pulse peak power.