期刊
出版社
ELSEVIER
DOI: 10.1016/j.nima.2022.167812
关键词
Silicon Drift Detectors; Beta spectroscopy; Forbidden beta decays
Silicon Drift Detectors (SDDs) are a promising technology for electron spectroscopy due to their excellent energy resolution and high interaction rate capability. We propose a model based on a Geant4 simulation to study electron response. We explore the potential of using SDD as a versatile and compact beta spectrometer that can be operated with standard technologies.
Silicon Drift Detectors (SDDs) are a promising technology for electron spectroscopy, due to their excellent energy resolution and capability to sustain high interaction rate. We present a model based on a Geant4 simulation for the electron response. We then investigate the possibility to use a SDD as a versatile and compact beta spectrometer that can be operated with standard technologies.
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