4.8 Article

Cationic vacancy engineering of p-TiO2 for enhanced photocatalytic nitrogen fixation

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NANOSCALE
卷 15, 期 8, 页码 4014-4021

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ROYAL SOC CHEMISTRY
DOI: 10.1039/d2nr06821d

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Defect engineering is an effective strategy to regulate catalyst properties. This study successfully synthesized titanium vacancy (V-Ti)-rich undoped anatase p-TiO2 to investigate its effect on the performance of photocatalytic nitrogen reduction reaction (NRR). The cation vacancies of V-Ti-rich p-TiO2 enhance carrier separation and transport, activating N-2 and efficiently reducing excited electrons to NH3. This work offers new opportunities and challenges for the design of titanium dioxide-based materials and driving the efficiency of photocatalytic nitrogen fixation processes through altering structural properties.
Defect engineering is one of the effective strategies to regulate and control catalyst properties. Constructing appropriate catalytically active centers effectively tunes the electronic and surface properties of the catalyst to achieve further enrichment of photogenerated electrons, enhances the electronic feedback of the catalytically active center to the anti-bonding orbitals of the nitrogen molecule, and enhances N-2 adsorption while weakening the N 00000000000000000 00000000000000000 00000000000000000 01111111111111110 00000000000000000 01111111111111110 00000000000000000 01111111111111110 00000000000000000 00000000000000000 00000000000000000 N bond. In this study, titanium vacancy (V-Ti)-rich undoped anatase p-TiO2 was successfully synthesized to investigate the effect of its metal vacancies on photocatalytic nitrogen reduction reaction (NRR) performance. The cation vacancies of V-Ti-rich p-TiO2 lead to local charge defects that enhance carrier separation and transport while trapping electrons to activate N-2, allowing effective reduction of the excited electrons to NH3. This work provides a viable strategy for driving the efficiency of photocatalytic nitrogen fixation processes by altering the structural properties of semiconductors through cationic vacancies, offering new opportunities and challenges for the design and preparation of titanium dioxide-based materials.

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