Spin-photogalvanic effect in chiral lead halide perovskites

Low-temperature solution-made chiral lead halide perovskites (LHPs) have spontaneous Bychkov-Rashba spin orbit coupling (SOC) and chiral-induced spin selectivity (CISS) qualities. Their coexistence may give rise to considerable spin and charge conversion capabilities for spin-orbitronic applications. In this study, we demonstrate the spin-photogalvanic effect for (R-MBA)(2)PbI4 and (S-MBA)(2)PbI4 polycrystalline film-based lateral devices (100 mu m channel length). The light helicity dependence of the short-circuit photocurrent exhibits the circular photogalvanic effect (CPGE) and linear photogalvanic effect (LPGE) with decent two-fold symmetry for a complete cycle in a wide temperature range from 4 K to 300 K. Because of the Rashba SOC and the material helicity, the effect is converse for the two chiral LHPs. In addition, its magnitude and sign can be effectively tuned by constant magnetic fields. The Rashba effect, CISS-generated unbalanced spin transport, and chiral-induced magnetization are mutually responsible for it. Our study evidently proves the future prospect of using chiral LHPs for spin-orbitronics.

Automated summary

This study demonstrates the circular photogalvanic effect (CPGE) and linear photogalvanic effect (LPGE) in (R-MBA)(2)PbI4 and (S-MBA)(2)PbI4 thin film materials. These effects exhibit decent two-fold symmetry for a complete cycle in a wide temperature range from 4 K to 300 K. The effect can be effectively tuned by constant magnetic fields, and the Bychkov-Rashba spin orbit coupling and chiral-induced magnetization are responsible for it. This research shows the promising future of using chiral lead halide perovskites for spin-orbitronics.