Heterointerface engineering of perovskite defects and energetics for light-emitting diodes

Perovskite light-emitting diodes (PeLEDs) rely on optimized device architecture to realize effective electro-optical converting. Especially, the stacks of dissimilar semiconducting materials form heterointerfaces, at which the defects and energetics of perovskite film greatly affect the device performance. Herein, we focus on the heterointerface engineering of perovskite towards high-quality PeLEDs. The defect engineering at both the bottom-surface (namely buried interface) and top-surface of perovskite film is simultaneously performed by semiconducting passivating molecules, which feature aligned energy levels and superior carrier injection ability regarding to perovskite. Moreover, such defect passivation could influence the heterointerface energetics. The perovskite work function is decreased by our suggested passivator treatment because of interface dipole, which results in band bending at the heterojunction and modulates the carrier dynamics. Hence, the electron injection is greatly enhanced, which boosts the up-conversion electroluminescence in current system. Overall, via the heterointerface engineering of defects and energetics synergistically, efficient PeLEDs with 3-fold enhancement of external quantum efficiency and low driving voltages with respect to pristine ones are achieved based on our proposed PeLED architecture.

Automated summary

By engineering the heterointerface, defect passivation is performed on both the bottom and top surfaces of the perovskite film using semiconducting passivating molecules. This enhances the electron injection and boosts the electroluminescence of perovskite light-emitting diodes (PeLEDs), resulting in efficient PeLEDs with significantly improved external quantum efficiency.